Effects of fluorine plasma pre-treatment on electrical properties of high-κ-based InP metal-oxide-semiconductor device

Xu, Qian; Liu, Weidong; Ding, Yao-Xin; Zheng, Zhi-Wei; Ying, Leiying; Zhang, Baoping

doi:10.1016/j.apsusc.2022.152688

Applied Surface Science

2022

DOI: 10.1016/j.apsusc.2022.152688

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Effects of fluorine plasma pre-treatment on electrical properties of high-κ-based InP metal-oxide-semiconductor device

Qian Xu

Weidong Liu

Yao-Xin Ding

et al.

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Cited by 4 publications

References 33 publications

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Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment

Zhang,

Yeh,

Lai

et al. 2024

Applied Physics Letters

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This study investigates the effects of fluorine plasma treatment (FPT) on the reliability of p-type ferroelectric fin-shaped field-effect transistors (FeFinFETs) based on Hf0.5Zr0.5O2 (HZO) and subjected to negative bias temperature instability (NBTI). Compared with non-FPT devices, FeFinFETs treated with FPT exhibited higher drive currents and mobility for fresh devices, indicating an improvement in interface quality. After NBTI stress, FPT devices exhibited lesser threshold voltage shift and subthreshold swing degradation than non-FPT devices, which is attributed to the passivation of dangling bonds between the Si/HZO interfaces by fluorine. Si–F bonds are less susceptible to breakage than Si–H bonds. These findings suggest that FPT is a promising technique to enhance the reliability and performance of FeFinFETs based on Hf0.5Zr0.5O2.

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Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment

Zhang,

Yeh,

Lai

et al. 2024

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

Top-Gated HfO₂-Capped InP Nanowire Photodetector With Low Noise and High Detectivity

Yu,

Gao,

Fang

et al. 2024

IEEE Photon. Technol. Lett.

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Interface State Density Modification and Dielectric Reliability Enhancement of ErTi_xO_y/Al₂O₃/InP Laminated Stacks

Qiao

Lü

et al. 2023

IEEE Trans. Electron Devices

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Effects of fluorine plasma pre-treatment on electrical properties of high-κ-based InP metal-oxide-semiconductor device

Cited by 4 publications

References 33 publications

Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment

Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment

Top-Gated HfO₂-Capped InP Nanowire Photodetector With Low Noise and High Detectivity

Interface State Density Modification and Dielectric Reliability Enhancement of ErTi_xO_y/Al₂O₃/InP Laminated Stacks

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Product

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About

Effects of fluorine plasma pre-treatment on electrical properties of high-κ-based InP metal-oxide-semiconductor device

Cited by 4 publications

References 33 publications

Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment

Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment

Top-Gated HfO₂-Capped InP Nanowire Photodetector With Low Noise and High Detectivity

Interface State Density Modification and Dielectric Reliability Enhancement of ErTixOy/Al2O3/InP Laminated Stacks

Contact Info

Product

Resources

About

Interface State Density Modification and Dielectric Reliability Enhancement of ErTi_xO_y/Al₂O₃/InP Laminated Stacks