Effects of film thickness and sputtering power on properties of ITO thin films deposited by RF magnetron sputtering without oxygen

Amalathas, Amalraj Peter; Alkaisi, Maan M.

doi:10.1007/s10854-016-5223-9

Cited by 49 publications

(23 citation statements)

References 24 publications

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“…The thickness of the grown films was measured using surface profilometer, and the values are tabulated in Table 1. It is observed that the thickness of films increases with the sputtering power [30]. FE-SEM images of the prepared thin films are shown in Fig.…”

Section: Methodsmentioning

confidence: 90%

Influence of Sputtering Power on the Structure and Electrical Properties of Bi2Fe4O9 Thin Films

Santhiya

Pugazhvadivu

Tamilarasan

et al. 2017

Acta Metall. Sin. (Engl. Lett.)

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Bismuth ferrite (Bi 2 Fe 4 O 9) thin films were grown on p-type Si (100) substrate by radio-frequency magnetron sputtering at 873 K. X-ray diffraction, field emission scanning electron microscopy and Raman spectroscopy studies revealed that the grown films have single-phase polycrystalline nature and are crystallized in orthorhombic structure. The grain size of the grown thin films was found to increase (56-130 nm) with sputtering power. Atomic force microscopy images clearly illustrated that the grown thin films have smooth surface. Energy-dispersive X-ray analysis revealed the presence of Bi, Fe and O elements with desired ratio and also the absence of impurities in the grown films. Analysis of ferroelectric hysteresis loops revealed that the remanent polarization and coercive field increase with the increase in sputtering power. Vicker's hardness analysis showed that the hardness of films strongly depends on the grain size and film thickness, which are mainly determined by the sputtering power. The above observations revealed that Bi 2 Fe 4 O 9 thin film deposited at higher sputtering power has good crystallinity and shows better electrical properties.

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Section: Methodsmentioning

confidence: 90%

Influence of Sputtering Power on the Structure and Electrical Properties of Bi2Fe4O9 Thin Films

Santhiya

Pugazhvadivu

Tamilarasan

et al. 2017

Acta Metall. Sin. (Engl. Lett.)

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“…In terms of carrier mobility, there was a sharp increase between sputtering power of 100 W and 150 W. We believe that the relatively excessive grain boundary of the film deposited at 100 W might make free carriers drop or scatter thereby showing lower mobility [15,25,26], as shown in Table 1, the carrier mobility of the film deposited at 100 W is 19.95 ± 0.997 cm 2 V −1 s −1 , which is far less than that of film deposited at 150 W (40.43 ± 2.201 cm 2 V −1 s −1 ).…”

Section: Resultsmentioning

confidence: 99%

“…The energy band gap, shown in Figure 7c, was calculated to be 3.78 eV, 3.81 eV, 3.87 eV and 3.92 eV for films deposited at 100 W, 150 W, 200 W, and 250 W, respectively. We believe that the reason for energy band gap variety is the increasing number of carriers, which lead to an increase in the Fermi level above the bottom of the conduction band, thereby causing enlargement in the optical band gap of the ITO films [15].…”

Section: Resultsmentioning

confidence: 99%

“…In addition, the research of Xuesong Yin [13] reveals that the thickness of ITO thin films applied to infrared stealth contexts are close to the micron level or even greater than that. Generally, the conductivity of ITO thin films tends to be better with the increase of film thickness, but the visible light transmittance has a significant reduction with the increase of film thickness [14,15]. Based on the Drude theory [16], the IR reflectance of ITO thin films can be enhanced by increasing the conductivity; therefore resolving the contradiction between the visible light transmittance and IR reflectivity of ITO thin films is the focus of this study.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Nanopillar Crystalline ITO Thin Films with High Transmittance and IR Reflectance by RF Magnetron Sputtering

Dong

Zhu

et al. 2019

Materials

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Nanopillar crystalline indium tin oxide (ITO) thin films were deposited on soda-lime glass substrates by radio frequency (RF) magnetron sputtering under the power levels of 100 W, 150 W, 200 W and 250 W. The preparation process of thin films is divided into two steps, firstly, sputtering a very thin and granular crystalline film at the bottom, and then sputtering a nanopillar crystalline film above the bottom film. The structure, morphology, optical and electrical properties of the nanopillar crystalline ITO thin films were investigated. From X-ray diffraction (XRD) analysis, the nanopillar crystalline thin films shows (400) preferred orientation. Due to the effect of the bottom granular grains, the crystallinity of the nanopillar crystals on the upper layer was greatly improved. The nanopillar crystalline ITO thin films exhibited excellent electrical properties, enhanced visible light transmittance and a highly infrared reflectivity in the mid-infrared region. It is noted that the thin film deposited at 200 W showed the best combination of optical and electrical performance, with resistivity of 1.44 × 10−4 Ω cm, average transmittance of 88.49% (with a film thickness of 1031 nm) and IR reflectivity reaching 89.18%.

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“…Figure 4 shows the relationship between the optical absorption coefficient (α) and photon energy(hν) for the Ti:SnO 2 film. The optical band gap (Eg) is calculated as follows with the equation [33,34]:…”

Section: Transmittancementioning

confidence: 99%

Optoelectronic Properties of Ti-doped SnO2 Thin Films Processed under Different Annealing Temperatures

Liu

Kuo²,

Chen

et al. 2020

Coatings

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Ti-doped SnO2 transparent conductive oxide (TCO) thin films are deposited on glass substrates using a radio frequency (RF) magnetron sputtering system and then are annealed at temperatures in the range of 200–500 °C for 30 min. The effects of the annealing temperature on the structural properties, surface roughness, electrical properties, and optical transmittance of the thin films are then systematically explored. The results show that a higher annealing temperature results in lower surface roughness and larger crystal size. Moreover, an annealing temperature of 300 °C leads to the minimum electrical resistivity of 5.65 × 10−3 Ω·cm. The mean optical transmittance increases with an increase in temperature and achieves a maximum value of 74.2% at an annealing temperature of 500 °C. Overall, the highest figure of merit (ΦTC) (3.99 × 10−4 Ω−1) is obtained at an annealing temperature of 500 °C.

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Effects of film thickness and sputtering power on properties of ITO thin films deposited by RF magnetron sputtering without oxygen

Cited by 49 publications

References 24 publications

Influence of Sputtering Power on the Structure and Electrical Properties of Bi2Fe4O9 Thin Films

Influence of Sputtering Power on the Structure and Electrical Properties of Bi2Fe4O9 Thin Films

Fabrication of Nanopillar Crystalline ITO Thin Films with High Transmittance and IR Reflectance by RF Magnetron Sputtering

Optoelectronic Properties of Ti-doped SnO2 Thin Films Processed under Different Annealing Temperatures

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