Effects of ferroelectric-poling-induced strain on the electronic transport and magnetic properties of (001)- and (111)-oriented La0.5Ba0.5MnO3 thin films

Li, X.Y.; Zheng, Ming; Zhu, Qiuxiang; Yang, Meng; Shi, Xun; Yuan, Guoliang; Wang, Yu; Chan, H.L.W.; Li, X.G.; Luo, Hongliang; Zheng, Ren‐Kui

doi:10.1016/j.matchemphys.2014.01.021

Cited by 3 publications

(1 citation statement)

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“…For example, Kanki et al 17 achieved 2.5 K reversible shift in the metal-to-insulator transition temperature by electric-field control of accumulation/depletion of charge carriers at the interface for the La 0.85 Ba 0.15 MnO 3 /Pb(Zr 0.2 Ti 0.8 )O 3 heterostructure. Li and Zhu et al 18,19 reported electric-field control of resistance and magnetization of La 1-x Ba x MnO 3 films grown on FE single-crystal substrates, through ferroelectric poling of FE substrates. However, such electric-field induced poling of FE substrates is irreversible, resulting in irreversible changes in the lattice strain and physical properties of the films.…”

Section: Introductionmentioning

confidence: 99%

Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals

Zheng

Zhu

et al. 2014

Journal of Applied Physics

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Articles you may be interested inStrain induced tunable anisotropic magnetoresistance in La0.67Ca0.33MnO3/BaTiO3 heterostructures J. Appl. Phys. 113, 17C716 (2013); 10.1063/1.4795841 Origin of large recoverable strain in 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 near the ferroelectric-relaxor transition Appl. Phys. Lett. 102, 062902 (2013); 10.1063/1.4790285 Coexistence of tunneling magnetoresistance and electroresistance at room temperature in La0.7Sr0.3MnO3/(Ba, Sr)TiO3/La0.7Sr0.3MnO3 multiferroic tunnel junctionsWe have fabricated magnetoelectric heterostructures by growing ferromagnetic La 1-x Ba x MnO 3 (x ¼ 0.2, 0.4) thin films on (001)-, (110)-, and (111)-oriented 0.31Pb(In 1/2 Nb 1/2 )O 3 -0.35Pb(Mg 1/3 Nb 1/2 )O 3 -0.34PbTiO 3 (PINT) ferroelectric single-crystal substrates. Upon poling along the [001], [110], or [111] crystal direction, the electric-field-induced non-180 domain switching gives rise to a decrease in the resistance and an enhancement of the metal-to-insulator transition temperature T C of the films. By taking advantage of the 180 ferroelectric domain switching, we identify that such changes in the resistance and T C are caused by domain switching-induced strain but not domain switching-induced accumulation or depletion of charge carriers at the interface. Further, we found that the domain switching-induced strain effects can be efficiently controlled by a magnetic field, mediated by the electronic phase separation. Moreover, we determined the evolution of the strength of the electronic phase separation against temperature and magnetic field by recording the straintunability of the resistance [ðDR=RÞ strain ] under magnetic fields. Additionally, opposing effects of domain switching-induced strain on ferromagnetism above and below 197 K for the La 0.8 Ba 0.2 MnO 3 film and 150 K for the La 0.6 Ba 0.4 MnO 3 film, respectively, were observed and explained by the magnetoelastic effect through adjusting the magnetic anisotropy. Finally, using the reversible ferroelastic domain switching of the PINT, we realized non-volatile resistance switching of the films at room temperature, implying potential applications of the magnetoelectric heterostructure in non-volatile memory devices. V C 2014 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 99%

Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals

Zheng

Zhu

et al. 2014

Journal of Applied Physics

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Tuning the Phase Separation, Charge Ordering, and Electronic Transport in Electron‐Doped Manganite Films by Piezo‐Strain and Magnetic Field

Zheng

Guan

et al. 2021

Adv Elect Materials

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electron-doped) manganites have sparked a surge of research activities as a supplement for the divalent ions substituted (hole-doped) manganites, showing great potential for the development of all-manganites-based p-n junctions and electronic devices. [7][8][9][10] Unlike other tetravalent elements, hafnium has a sole tetravalent or zero valence state. This feature makes La 1-x Hf x MnO 3 an excellent candidate for investigating the electronic structures, Jahn-Teller lattice distortion and double-exchange interaction between the Mn 3+ -Mn 2+ ions in electron-doped manganites instead of that between the Mn 3+ -Mn 4+ ions in hole-doped manganites. The subtle balance of free energy between the coexistent phases in La 1-x Hf x MnO 3 films is always unstable and can thus be easily tipped by an external stimulus, such as current, magnetic field, stress, etc., which causes drastic modification of properties of the films. For example, Wang et al. [11] reported that a magnetic field of H = 6 T increases the Curie temperature by 32 K with a magnetoresistance (MR) of 300% near Curie temperature for La 0.9 Hf 0.1 MnO 3 films on SrTiO 3 substrates. Xing et al. [12] found current induced abnormal and giant electroresistance effect (1257%) and the change of the ground state from metallic to insulating phases for La 0.9 Hf 0.1 MnO 3 films on LaAlO 3 substrates. It is noteworthy that Wu et al. [13] observed that the substrate-induced epitaxial lateral tensile strain enhances the metal-to-insulator transition temperature as the thickness is reduced from 80 to 15 nm for La 0.8 Hf 0.2 MnO 3 films on SrTiO 3 substrates. This result is in contrast to those of other hole-doped manganite films, which isThe macroscopic physical properties and functionalities of strongly correlated complex oxides usually originate from and depend sensitively on microscopic interactions, which can be controlled by an external stimulus. Here, in electron-doped La 0.85 Hf 0.15 MnO 3 /Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 multiferroic heterostructure, the role of phase separation in manipulating charge ordering and electronic transport by piezo-strain and magnetic field is determined. The electric-field-induced lateral compressive piezo-strain suppresses the chargeordering transition temperature and decreases the film resistance with a giant gauge factor of 27 368, due to the enhancement of the double-exchange interaction between the Mn 3+ -Mn 2+ ions and the suppression of the electronphonon coupling stemming from the Jahn-Teller deformation. Moreover, the magnetic field can weaken the piezo-resistance effect by 342 times. This result, together with elastically controlled magnetoresistance effect, demonstrates intimate correlation between the piezo-strain-induced and magneticfield-induced effects by adjusting phase separation tendency. The findings indicate the importance of phase separation in multi-field quantum control of electron-doped perovskite manganites.

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Magnetoelectric coupling in ferromagnetic/ferroelectric heterostructures: A survey and perspective

Channagoudra¹,

Dayal²

2022

Journal of Alloys and Compounds

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Effects of ferroelectric-poling-induced strain on the electronic transport and magnetic properties of (001)- and (111)-oriented La0.5Ba0.5MnO3 thin films

Cited by 3 publications

References 29 publications

Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals

Electric-field-controlled interface strain coupling and non-volatile resistance switching of La1-xBaxMnO3 thin films epitaxially grown on relaxor-based ferroelectric single crystals

Tuning the Phase Separation, Charge Ordering, and Electronic Transport in Electron‐Doped Manganite Films by Piezo‐Strain and Magnetic Field

Magnetoelectric coupling in ferromagnetic/ferroelectric heterostructures: A survey and perspective

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