2019
DOI: 10.1016/j.solidstatesciences.2019.03.006
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Effects of Fe concentration on properties of ZnO nanostructures and their application to photocurrent generation

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Cited by 33 publications
(12 citation statements)
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“…Interestingly, the bandgap can be modified by a shift in the absorption edge and variations in carrier concentration. According to Burstein-Moss effect, when the states close to the conduction band of a semiconductor get populated, its absorption edge is pushed to higher energies leading to increased band gap [21].…”
Section: Resultsmentioning
confidence: 99%
“…Interestingly, the bandgap can be modified by a shift in the absorption edge and variations in carrier concentration. According to Burstein-Moss effect, when the states close to the conduction band of a semiconductor get populated, its absorption edge is pushed to higher energies leading to increased band gap [21].…”
Section: Resultsmentioning
confidence: 99%
“…XRD spectra as shown in Figure 4 can be interpreted that crystal structures are hexagonal wurtzite for ZnO and the nanocomposites according to the JCPDS card no. 36-1451 [14,15]. However, the peak width and intensity are differences between ZnO and the nanocomposites.…”
Section: Resultsmentioning
confidence: 99%
“…The latter is interesting because it is inexpensive, achievable at low temperatures, allows modulating the morphology of ZnO (thin layers or high-quality nanostructures) by adjusting the deposition parameters (potential, current density, bath temperature and precursor concentration [25]). In addition, several literature studies have confirmed that doping ZnO nanocrystals with an adequate amount of Mg, Ni, Al , Fe and Cu [26][27][28][29][30][31], modifies its electrical, magnetical and optical properties. In particular, Cu is considered an interesting dopant due to its low cost and its many chemical and physical characteristic similar to those of Zn due to the similarity of its electronic structure, leading to the replacement of Zn by Cu in the low-energy ZnO lattice [32].…”
Section: Introductionmentioning
confidence: 94%