Effects of environmental and operational variability on the spectrally selective properties of W/WAlN/WAlON/Al2O3-based solar absorber coating

Dan, Atasi; Basu, Bikramjit; Echániz, T.; Arrieta, Isabel; López, G.A.; Barshilia, Harish C.

doi:10.1016/j.solmat.2018.04.020

Cited by 23 publications

(11 citation statements)

References 54 publications

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“…Besides, the aluminium oxide based coating has been studied. The total emissivity has been calculated by integrating the directional emissivity values measured from 10 to 80º, also as a function of temperature, as suggested in other studies [25]. It is worth noting that the angular dependence of the emissivity may vary due to the configuration of the multilayers.…”

Section: Resultsmentioning

confidence: 99%

High accuracy infrared emissivity between 50 and 1000 ᵒC for solar materials characterization

Fuente

Echániz

Arrieta³

et al. 2020

MATEC Web Conf.

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The total hemispherical emissivity of materials used in the solar energy industry is a critical parameter in the calculation of the radiative thermal losses and material efficiency, especially in solar thermal collector absorbing surfaces. This is because the radiative heat losses have a significant economic impact on the final cost of the electricity produced in solar plants. Our laboratory, HAIRL, in the University of the Basque Country (UPV/EHU) in Spain [1] is the first to have published infrared spectral emissivity measurements in Solar Absorber Surfaces (SAS) at working temperature [2]. The laboratory allows measuring between 50 and 1000 ºC in the 0.83-25 μm range and is also capable of doing directional measurements at different angles between 0 and 80 degrees. Therefore, it is suitable for measuring solar selective coatings, for studying high temperature stability and for characterizing thermal energy harvesting materials. In this presentation, we show the specifications of our laboratory, the results of spectral emissivity measurements in air-resistant solar selective coatings and in eutectic alloys for thermal storage and we demonstrate the necessity of measuring at working temperature in order to possess reliable data.

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Section: Resultsmentioning

confidence: 99%

High accuracy infrared emissivity between 50 and 1000 ᵒC for solar materials characterization

Fuente

Echániz

Arrieta³

et al. 2020

MATEC Web Conf.

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show abstract

“…As a final note, one of the main advantages of the direct method is that it allows directional measurements of the emissivity, while the indirect method can only be used at an angle of 13º. As an approach to more accurate results, hemispherical emissivity measurements are planned to be performed in this sample, as some other works in solar selective coatings suggest the influence of directional emissivity on the total result [14].…”

Section: Fig 2 Comparison Between Both Methods For Calculating the mentioning

confidence: 99%

c-Si PV cells emissivity characterization at low operating temperatures for efficiency management

et al. 2020

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Efficiency is a critical parameter for a solar cell to be successful and is closely related to the working temperature of the cell. In turn, the temperature can be related to the infrared emissivity, the parameter that governs the thermal radiative properties of a body. In particular, the importance of infrared emissivity in a solar cell is essential in passive cooling applications, where controlled radiative thermal losses could let the cell operate at lower temperatures, the range where they present higher efficiency. In this presentation, the emissivity of c-Si solar cells in the low temperature range (around 50 ºC) is discussed. Traditionally, it has been determined by indirect reflectivity measurements at ambient temperature and extrapolated to working temperatures, but here, a direct measurement is proposed. For an accurate value the measurements are performed in the high accuracy radiometer of the University of the Basque Country, which allows spectral directional emissivity measurements as a function of temperature.

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“…Wu et al [23] proposed a SiO 2 /W multilayer absorber with square holes, obtaining the average α λ of 0.986 within 0.26-1.58 μm and the η of 90.32% under 373 K and one sun. Dan et al [24] designed a W/WAlN/WAlON/Al 2 O 3 multilayer absorber and achieved a high α tot of 0.934 and a low emittance of 0.11 at 773 K. Aikifa et al [25] designed a SiO 2 /SiC-W/W three-layer structure, and the SiC-W layer includes three SiC sublayers containing random tungsten nanoclusters in different concentrations. And this design can obtain the α tot of 0.9545 and the emittance of 0.2 at 1050 K.…”

Section: Introductionmentioning

confidence: 99%

A high-Temperature Near-Perfect Solar Selective Absorber Combining Tungsten Nanohole and Nanoshuriken Arrays

Qiu¹,

Xu²,

Li³

et al. 2021

ES Energy Environ.

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Solar selective absorber is a key component that directly influences the photothermal efficiency in high-temperature solar energy harvesting. In present work, a solar selective absorber combining tungsten nanohole and nanoshuriken arrays was proposed and studied. Firstly, the geometry of the absorber was optimized, obtaining a near-perfect absorber. Then, evaluation of the near-perfect absorber indicated that it can achieve near unit spectral absorptance within 0.28-1.25 μm and obtain a solar absorptance of 0.9457, thus achieving a photothermal efficiency of 91.52% at 1273 K under 1000 suns. Then, analysis of its absorbing mechanisms revealed that the high solar absorptance is contributed by the impedance matching, and the coupling effects of the cavity resonance, surface plasmon polaritons, magnetic polaritons, and local surface plasmon resonance. In addition, study on the effects of the geometric parameters indicated that the absorber performance is insensitive to the changes in geometric parameters when the changes are within fabrication uncertainties. Finally, effects of the polarization angle and incident angle were examined, indicating that the near-perfect absorber exhibits high insensitivities to wide-angle incidence and all-angle polarization. These results indicate the near-perfect absorber is promising for high temperature solar energy harvesting.

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Effects of environmental and operational variability on the spectrally selective properties of W/WAlN/WAlON/Al2O3-based solar absorber coating

Cited by 23 publications

References 54 publications

High accuracy infrared emissivity between 50 and 1000 ᵒC for solar materials characterization

High accuracy infrared emissivity between 50 and 1000 ᵒC for solar materials characterization

c-Si PV cells emissivity characterization at low operating temperatures for efficiency management

A high-Temperature Near-Perfect Solar Selective Absorber Combining Tungsten Nanohole and Nanoshuriken Arrays

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