Effects of environment on annealing behavior of In+ implanted c-axis sapphire

Xie, D. Z.; Zhu, Dapeng; Cao, D. X.; Gao, Yu; Pan, H.C; Xu, Hongjie

doi:10.1016/s0168-583x(98)80029-3

Cited by 2 publications

(2 citation statements)

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“…A 360 keV 1 × 10 16 In cm −2 implanted c-axis sapphire sample, with a buried damaged layer and a single-crystal surface layer (about 150 nm thick) after 900 • C/12 h thermal annealing in Ar [13] was used to evaluate the chemical etching of single-crystal Al 2 O 3 . Figure 1 shows the RBS-C spectra of the single-crystalline surface layer before amount of remaining yttrium was calculated to be 7.8 × 10 15 Y cm −2 , which was much less the experimentally measured dose of 7.3 × 10 16 Y cm −2 before etching, and the retained yttrium resided in the crystalline material under the amorphous layer.…”

Section: Chemical Etchingmentioning

confidence: 99%

“…Ion beam etching was conducted on the single-crystalline and amorphous c-axis sapphire samples. In order to measure the amount of single-crystal material removed, a 93 nm single-crystalline surface layer [13], with a buried damaged layer produced by 360 keV 1 × 10 16 In cm −2 implantation, was studied. Figure 4 shows the RBS-C spectra for the as-implanted and the etched condition.…”

Section: Ion Beam Etchingmentioning

confidence: 99%

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Enhanced etching of sapphire damaged by ion implantation

Xie

Zhu

Haochang

et al. 1998

J. Phys. D: Appl. Phys.

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Enhanced ion beam etching and chemical etching of sapphire damaged by ion implantation have been investigated. In our experiments an amorphous layer or a damaged layer were produced respectively by high-dose yttrium ion or platinum ion implantation. Rutherford backscattering spectrometry and channelling (RBS-C) was used to analyse the material removed by ion beam etching or chemical etching. For 500 eV Ar ion beam etching, the etching rate for amorphous sapphire was 1.5 times faster than for single-crystalline sapphire. For chemical etching the etchant was acid solution of HCI-HF-. Etching for 10 min removed a 150 nm thick amorphous layer, while only about 62 nm of the damaged layer (non-amorphous) was removed, and no visible change was observed for single-crystalline sapphire.

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Section: Chemical Etchingmentioning

confidence: 99%

Section: Ion Beam Etchingmentioning

confidence: 99%