Effects of emitter dimensions on low-frequency noise in double-polysilicon BJTs

Peng

2000

Measurements of low-frequency electrical noise (LFN) in an in-phase gain-coupled distributed feedback lasers with etched quantum-well active-layers emitting at 1.3 μm wavelength have been conducted. In particular, the injected current dependence of LFN is investigated over a wide range of injection current (from 10−2 μA to 60 mA). Pure 1/f noise spectra were observed in all measurements. The current dependence of the 1/f noise strongly correlates to the I–V characteristics. We find that noise from different mechanisms dominates when the lasers operate in different ranges of injection currents.

Section: Discussionmentioning

confidence: 99%

Low-frequency electrical noise of high-speed, high-performance 1.3 μm strained multiquantum well gain-coupled distributed feedback lasers

Chen

Peng

2000

“…There have been some previous attempts to measure the 1/f noise in polysilicon emitter bipolar transistors with different emitter areas A E , 2,3,15 different emitter perimeters P E , 3,15 and different area-to-perimeter ratios A E / P E . 3,14,15 It was shown 2,3,14,15 that the relative spectral noise density of the base current fluctuations normalized to 1 Hz is given by K F ϭS I /(I 2 • f ), varies inversely with emitter area A E .…”

Section: Dependence Of Low Frequency Noise On the Emitter Geometrymentioning

confidence: 99%

“…3,14,15 It was shown 2,3,14,15 that the relative spectral noise density of the base current fluctuations normalized to 1 Hz is given by K F ϭS I /(I 2 • f ), varies inversely with emitter area A E . Figure 10 shows the dependence of K F on emitter area for our npn transistors, as well as those in Refs.…”

Section: Dependence Of Low Frequency Noise On the Emitter Geometrymentioning

confidence: 99%

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Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar junction transistors

Rumyantsev

Bashir

et al. 1998

“…In addition, noise increases significantly as the device size decreases. 5,6 Therefore, for thin active layer ␣-Si:H TFTs, the noise performance becomes increasingly important.…”

Section: Introductionmentioning

confidence: 99%

Low-frequency noise in a thin active layer α-Si:H thin-film transistors

Chen

Rheenen

et al. 1999

Low-frequency noise of hydrogenated-amorphous-silicon ͑␣-Si:H͒ thin-film transistors ͑TFTs͒ with a thin active layer and an inverted staggered device structure operating in the conducting mode has been investigated. Pure 1/f -noise spectra were observed. The results show that the physical location of the noise in ␣-Si:H TFTs is different from that in crystalline metal-oxide-semiconductor field-effect transistors. The noise contributions from the channel and interface have been determined for the device operating in different modes. The 1/f noise of ␣-Si:H TFTs stems from the channel when the device is operated in the linear region at high gate voltages. However, the 1/f noise of ␣-Si:H TFTs generated at the interface becomes significant when the device is operated in the saturation region. The interface noise can be explained by the number fluctuation model (⌬N model͒. The channel noise can be explained by either the ⌬N model or the mobility fluctuation model ͑⌬ model͒.