Effects of dose on activation characteristics of P in Ge

Anisuzzaman, Mohammad; Sadoh, Taizoh

doi:10.1016/j.tsf.2011.10.076

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Raman Spectroscopy1

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“…6, which confirms the O-rich status of ZnO, as the intensity of E high 2 is higher than that of A 1 (LO) modes appearing at 437 cm −1 and 577 cm −1 . [23] Based on the previous reports, the peaks at 643 cm −1 and 850 cm −1 in Fig. 6 are attributed to the nitrogen-related defects.…”

Section: Raman Spectroscopymentioning

confidence: 58%

Characterization of deep acceptor level in as-grown ZnO thin film by molecular beam epitaxy

et al. 2014

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We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy (MBE). The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage (I-V ) measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49±0.03 eV and capture cross-section of 8.57×10 −18 cm 2 . Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy (SIMS) of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO.

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Section: Raman Spectroscopymentioning

confidence: 58%