Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice <i>n</i>B<i>n</i> detector performance

Newell, A. T.; Logan, Julie V.; Carrasco, Rigo A.; Alsaad, Zinah M.; Hains, C. P.; Duran, Joshua M.; Ariyawansa, G.; Balakrishnan, Ganesh; Maestas, Diana; Morath, Christian P.; Hawkins, Samuel D.; Hendrickson, Alex; Webster, Preston T.

doi:10.1063/5.0136409

Cited by 5 publications

(1 citation statement)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The dark currents of these detectors at different temperatures are shown in Figures a,b. The dark current is an important parameter for photonic detectors, − but our structure has a PIP profile and the diode is considered as Schottky diode on the bottom and top contacts. Because a Schottky diode performs poorly on highly p-type doped Si and the width of the depletion is very thin, the carriers may tunnel through this area, and the contact is considered as ohmic.…”

Section: Resultsmentioning

confidence: 99%

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Wang,

Kong,

et al. 2023

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

As a representative of new semiconductor nanostructured materials, the Si0.7Ge0.3/Si multilayers have received extensive attention for electronic and photonic applications. We fabricated an uncooled detector consisting of a four-period intrinsic Si0.7Ge0.3/Si multilayer as an active part and two p-type doped electrodes (a PIP profile) for long wavelength infrared detection. The strain in the SiGe/Si multilayer was characterized globally by high-resolution X-ray diffraction (HRXRD) and locally by nanobeam diffraction (NBD) in a high-resolution transmission electron microscope. The performance of detectors was characterized by the temperature coefficient of resistance (TCR), voltage noise power spectral density, and dark current measurement. The detectors with graphene on the top electrode show an improvement for TCR from −2.65%/K to −3.94%/K. Based on our results, the SiGe/Si multilayer structure is an excellent thermal imaging material due to its excellent thermal response as well as its CMOS compatibility.

show abstract

Section: Resultsmentioning

confidence: 99%

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Wang,

Kong,

et al. 2023

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

show abstract

Demonstration of a 4.32 μ m cutoff InAsSbBi nBn photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing

Webster,

Logan,

Helms

et al. 2023

Applied Physics Letters

View full text Add to dashboard Cite

InAsSbBi nBn photodetectors are demonstrated that are lattice-matched to the underlying GaSb substrate with a 4.32 μm wavelength cutoff at 150 K that is 0.3 μm longer than that of lattice-matched InAsSb at this temperature reflecting a 0.5% Bi mole fraction in the InAsSbBi active region. A low growth temperature was utilized to facilitate the incorporation of Bi, resulting in a minority carrier lifetime on the order of 24 ns in the InAsSbBi active region. Nevertheless, the detectors exhibit a quantum efficiency of 17% at 3.3 μm wavelength with a dark current density of 50 μA/cm2 at 150 K and −0.4 V bias and the strong photoresponse turn-on characteristic of a random alloy at 4.32 μm wavelength and 150 K. A shot noise-equivalent irradiance analysis indicates that this detectors' dark-current-limited noise-equivalent irradiance of 1012 cm−2 s−1 is two orders of magnitude greater than the Rule 07 expectation for this cutoff, and dark-current-limited shot noise-equivalent irradiance performance transitions to photon-limited at 1.7 × 1015 photons/cm2 s.

show abstract

Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors

Newell,

Logan,

Carrasco

et al. 2023

Journal of Applied Physics

View full text Add to dashboard Cite

An investigation into the effects of 63 MeV proton irradiation on high-sensitivity mid-wave infrared InGaAs/InAsSb nBn devices is performed. Three different structures with various absorber region doping profiles are irradiated and characterized to assess their impact on performance degradation. Minority carrier lifetime is measured using time-resolved photoluminescence and lifetime damage factors are assessed. The majority carrier concentration is determined via capacitance–voltage measurements and dopant introduction rates are calculated. An analysis of dark current density is performed using these material parameters, revealing a reduction in mobility with proton fluence and the emergence of a proton-induced trap energy level. Quantum efficiency is calculated at each proton fluence, and quantum efficiency damage factors show that the graded doping structure exhibits the least reduction of quantum efficiency with dose, attributed to its effective mobility enhancement. Conclusively, detector sensitivity, assessed via shot-noise limited noise-equivalent irradiance, shows that the graded doping structure is the least susceptible to high energy proton irradiation-induced performance degradation.

show abstract

Effects of doping and minority carrier lifetime on mid-wave infrared InGaAs/InAsSb superlattice nBn detector performance

Cited by 5 publications

References 19 publications

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Demonstration of a 4.32 μ m cutoff InAsSbBi nBn photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing

Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors

Contact Info

Product

Resources

About