Effects of dopant content on optical and electrical properties of In2O3: W transparent conductive films

Zhang, Yuanpeng; Li, Yuan; Li, Chunzhi; Wang, Wenwen; Zhang, Junying; Wang, Rongming

doi:10.1007/s12598-012-0485-8

Cited by 8 publications

(3 citation statements)

References 14 publications

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“…1 Thermodynamics analysis for the formation of new phase AlN and Si. It is known by the relative literature [12,13]:…”

Section: Resultsmentioning

confidence: 99%

Influence of Si3N4 Adding on the Performance of Al-Al2O3 Composite

Qin

et al. 2014

KEM

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Al-Si3N4-Al2O3composite was prepared using tabular corundum, white fused corundum,α-Al2O3fine powder and Si3N4fine powder as raw materials and phenolic resin as low temperature binder under nitrogen atmosphere at 1 300 °C for 8 h. The results show that the main reinforced phase of Al-Al2O3is Al4O4C in Al-Al2O3specimens without Si3N4fine powder adding,the main reinforced phase of Al-Si3N4-Al2O3is SIALON while small quantity of Al,Si plastic phase presents in Si3N4adding Al-Al2O3specimens. Si5AlON7(Z=1) is formed in Al-Si3N4-Al2O3specimens at low temperature (1 300 °C), which presents good comprehensive properties.

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“…1 Thermodynamics analysis for the formation of new phase AlN and Si. It is known by the relative literature [12,13]:…”

Section: Resultsmentioning

confidence: 99%

Influence of Si3N4 Adding on the Performance of Al-Al2O3 Composite

Qin

et al. 2014

KEM

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“…[43,44] By preparing the ITO films at a higher temperature (500 °C), the high mobility of 68 cm 2 V −1 s −1 is achieved, but it is not practical for most applications. [45] Intrinsically, large-radius Sn (or W, [46] Ti, [47] Mo, [48] Zr, [49] , etc.) doped In 2 O 3 cannot achieve super high electron mobility because the large-radius atomic doping can increase free carrier scattering.…”

Section: Introductionmentioning

confidence: 99%

“…Intrinsically, large‐radius Sn (or W, [ 46 ] Ti, [ 47 ] Mo, [ 48 ] Zr, [ 49 ] , etc.) doped In 2 O 3 cannot achieve super high electron mobility because the large‐radius atomic doping can increase free carrier scattering.…”

Section: Introductionmentioning

confidence: 99%

Insight into the High Mobility and Stability of In₂O₃:H Film

Ge,

Liu,

Zhu

et al. 2023

Small

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Wide bandgap semiconductors, particularly In2O3:Sn (ITO), are widely used as transparent conductive electrodes in optoelectronic devices. Nevertheless, due to the strohave beenng scattering probability of high‐concentration oxygen vacancy (VO) defects, the mobility of ITO is always lower than 40 cm2 V−1 s−1. Recently, hydrogen‐doped In2O3 (In2O3:H) films have been proven to have high mobility (>100 cm2 V−1 s−1), but the origin of this high mobility is still unclear. Herein, a high‐resolution electron microscope and theoretical calculations are employed to investigate the atomic‐scale mechanisms behind the high carrier mobility in In2O3:H films. It is found that VO can cause strong lattice distortion and large carrier scattering probability, resulting in low carrier mobility. Furthermore, hydrogen doping can simultaneously reduce the concentration of VO, which accounts for high carrier mobility. The thermal stability and acid–base corrosion mechanism of the In2O3:H film are investigated and found that hydrogen overflows from the film at high temperatures (>250 °C), while acidic or alkaline environments can cause damage to the In2O3 grains themselves. Overall, this work provides insights into the essential reasons for high carrier mobility in In2O3:H and presents a new research approach to the doping and stability mechanisms of transparent conductive oxides.

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Recovery Indium from Indium-Enriched Cementation and Co-precipitation Simultaneously Fe-As

Huang

Deng

Wei

et al. 2019

The Minerals, Metals &Amp; Materials Series

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Effects of dopant content on optical and electrical properties of In2O3: W transparent conductive films

Cited by 8 publications

References 14 publications

Influence of Si<sub>3</sub>N<sub>4</sub> Adding on the Performance of Al-Al<sub>2</sub>O<sub>3</sub> Composite

Influence of Si<sub>3</sub>N<sub>4</sub> Adding on the Performance of Al-Al<sub>2</sub>O<sub>3</sub> Composite

Insight into the High Mobility and Stability of In₂O₃:H Film

Recovery Indium from Indium-Enriched Cementation and Co-precipitation Simultaneously Fe-As

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Effects of dopant content on optical and electrical properties of In2O3: W transparent conductive films

Cited by 8 publications

References 14 publications

Influence of Si<sub>3</sub>N<sub>4</sub> Adding on the Performance of Al-Al<sub>2</sub>O<sub>3</sub> Composite

Influence of Si<sub>3</sub>N<sub>4</sub> Adding on the Performance of Al-Al<sub>2</sub>O<sub>3</sub> Composite

Insight into the High Mobility and Stability of In2O3:H Film

Recovery Indium from Indium-Enriched Cementation and Co-precipitation Simultaneously Fe-As

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Product

Resources

About

Insight into the High Mobility and Stability of In₂O₃:H Film