Effects of disorder on the blockade voltage of two-dimensional quantum dot arrays

Müller, H. J.; Katayama, Kozo; Mizuta, Hiroshi

doi:10.1063/1.368607

Cited by 39 publications

(36 citation statements)

References 26 publications

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“…The discrepancies may be due to the fact that we are using MW formula which neglects size disorder which can have a great influence in V t . For example, if we consider that the smallest dot size has the most influence in the determination of V t as pointed out be Muller et al [41], then we obtain a more reasonable value of N ~ 90.…”

Section: Theoretical Studies Of Qd Arrays By Middleton and Wingreen (mentioning

confidence: 99%

Coulomb blockade and hopping conduction in graphene quantum dots array

2011

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We show that the low temperature electron transport properties of chemically functionalized graphene can be explained as sequential tunneling of charges through a two dimensional array of graphene quantum dots (GQD). Below 15 K, a total suppression of current due to Coulomb blockade through GQD array was observed. Temperature dependent current-gate voltage characteristics show Coulomb oscillationswith energy scales of 6.2-10 meV corresponding to GQD sizes of 5-8 nm while resistance data exhibit an Efros-Shklovskii variable range hopping arising from structural and size induced disorder.

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Section: Theoretical Studies Of Qd Arrays By Middleton and Wingreen (mentioning

confidence: 99%

Coulomb blockade and hopping conduction in graphene quantum dots array

2011

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“…The single electron switching operation of the tunnel junctions is not used in this scheme. As a result, the background charge effects which are serious in single-electron transistor operations are greatly alleviated [5]. An array of 0018-9383/99$10.00 © 1999 IEEE tunnel junctions is effective in obtaining a higher Coulomb gap as well as in averaging out the background charge fluctuations.…”

Section: Design and Operation Principlesmentioning

confidence: 98%

“…The Coulomb gap of disordered arrays due to the effect of background charge and other effects is discussed in [5], [7], and [8].…”

Section: Design and Operation Principlesmentioning

confidence: 99%

Design and analysis of high-speed random access memory with Coulomb blockade charge confinement

Katayama

Mizuta

Müller

et al. 1999

IEEE Trans. Electron Devices

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Abstract-A silicon-based memory cell utilizing Coulomb blockade is analyzed for use as a high-speed RAM. Operation principles and design guidelines are given by simple analytical modeling and simulations. By performing transient waveform Monte Carlo simulations, high-speed write operation is demonstrated with a time shorter than 10 ns. The memory node voltage of less than 0.1 V is detected by a newly proposed split-gate cell structure with a minimum disturbance to/from nonselected cells, which indicates the compatibility of this structure with conventional field effect transistors.

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“…This result also supports the view that the CB characteristics for PC-Trs with V T > 5 mV are determined by the selectively oxidized GBs in the channel. The dimension of the grain that acts as a charging island was evaluated by using a twodimensional capacitance calculation [23] and the observed Coulomb gap. First, for the oxidized PCTr with V T < 5 mV corresponding to Fig.…”

Section: The Inset Tomentioning

confidence: 99%

Single-Electron Charging Phenomena in Nano/Polycrystalline Silicon Point Contact Transistors

Mizuta

Furuta²,

Kamiya³

et al. 2003

SSP

Self Cite

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Abstract. This paper gives a review of our recent work investigating the physics of single-electron charging phenomena in nano/polycrystalline silicon nanostructures. We first provide a short overview on the research of silicon-based single-electron devices from the last decade. Various single-electron transistor structures are compared in terms of control of electron islands and tunnel barriers. We then study the single-electron charging phenomena in nano/polycrystalline silicon nanostructures. A novel point-contact transistor is introduced, which features an extremely short and narrow nano/poly-Si nanowire as the transistor's channel. This structure is suitable for studying how a grain smaller than 10 nm in size and a discrete grain boundary work as a charging island and a tunnel barrier, respectively. The relationships between structural and electrical parameters of grains/grain-boundaries and the resulting Coulomb blockade characteristics for the point contact transistors are investigated by applying various passivation processes. Finally, optimisation of grain and grain-boundary structures is discussed for improving the Coulomb blockade characteristics and realizing nano/poly-Si single-electron transistors operating at room temperature.

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Effects of disorder on the blockade voltage of two-dimensional quantum dot arrays

Cited by 39 publications

References 26 publications

Coulomb blockade and hopping conduction in graphene quantum dots array

Coulomb blockade and hopping conduction in graphene quantum dots array

Design and analysis of high-speed random access memory with Coulomb blockade charge confinement

Single-Electron Charging Phenomena in Nano/Polycrystalline Silicon Point Contact Transistors

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