Effects of Dislocation Filtering Layers on Optical Properties of Third Telecom Window Emitting InAs/InGaAlAs Quantum Dots Grown on Silicon Substrates
Wojciech Rudno-Rudziński,
Michał Gawełczyk,
Paweł Podemski
et al.
Abstract:Integrating light emitters based on III−V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5°off-cut Si substrate and emitting light at 1.5 μm, compatible with established telecom platform. Using different dislocation defect filtering layers, exploiting strained superlattices, and … Show more
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