Effects of different nitrogen/methane ratios on the residual stress of a-C:N thin films prepared by plasma enhanced chemical vapor deposition

Chu, Rong-Shian; Shiue, Sham‐Tsong

doi:10.1016/j.tsf.2009.03.085

Cited by 5 publications

(5 citation statements)

References 35 publications

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“…55,56 An NH 3 molecule is constructed by one N atom and three H atoms. Hence, Table IV is listed the results of this study and those of N 2 addition 55 and H 2 addition 56 in CH 4 for preparation of carbon films using PECVD. In this table, three points are worthy to mention.…”

Section: J-v and C-v Behaviors Of A-c:h(n)/p-si Devices-mentioning

confidence: 99%

“…Compared to previous works.-In the literature, the N 2 or H 2 is often added in CH 4 to prepare PECVD carbon films. 55,56 An NH 3 molecule is constructed by one N atom and three H atoms. Hence, Table IV is listed the results of this study and those of N 2 addition 55 and H 2 addition 56 in CH 4 for preparation of carbon films using PECVD.…”

Section: J-v and C-v Behaviors Of A-c:h(n)/p-si Devices-mentioning

confidence: 99%

“…A comparison among the NH 3 addition (this work), N 2 addition,55 and H 2 addition 56 in CH 4 to prepare carbon films using PECVD at some specified process parameters.Table V. A comparison between this study and previous work,57 where carbon films were prepared using NH 3 /CH 4 mixtures at some specified process parameters.…”

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confidence: 99%

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Effects of Ammonia/Methane Mixtures on Characteristics of Plasma Enhanced Chemical Vapor Deposition n-Type Carbon Films

Hsueh

Chiang

et al. 2011

J. Electrochem. Soc.

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This study investigates the effect of ammonia/methane (NH3/CH4) mixtures on characteristics of nitrogen-doped amorphous hydrogenated carbon (a-C:H(N)) films prepared by plasma enhanced chemical vapor deposition. The a-C:H(N) films with identical thickness are deposited on p-type silicon (p-Si) substrates using different NH3/CH4 ratios. These a-C:H(N)/p-Si junctions are a potential candidate to use in electronic or photoelectronic devices. The microstructures, optical properties, and mechanical properties of a-C:H(N) films are evaluated. Furthermore, the residual stresses in a-C:H(N) films, and also, the current density-voltage and capacitance density-voltage behaviors of a-C:H(N)/p-Si devices are investigated. Experimental results indicate that as the NH3/CH4 ratio increases from 0 to 0.2, the nitrogen/carbon ratio increases from 0 to 5.4%. The nitrogen-carbon bonds, nitrogen-hydrogen bonds, and sp(2) carbon fraction of carbon films enlarge with increasing NH3/CH4 ratio, while the deposition rate, ordered degree, optical band gap, reduced Young's modulus, hardness, and residual stress of carbon films decrease. The a:C:H(N)/p-Si device has an optimum electrical property at the NH3/CH4 ratio of 0.15 (or at the N/C ratio of 4.7%). Finally, the results of this study are compared with those reported in literatures. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.051202jes] All rights reserved

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Section: J-v and C-v Behaviors Of A-c:h(n)/p-si Devices-mentioning

confidence: 99%

Section: J-v and C-v Behaviors Of A-c:h(n)/p-si Devices-mentioning

confidence: 99%

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Effects of Ammonia/Methane Mixtures on Characteristics of Plasma Enhanced Chemical Vapor Deposition n-Type Carbon Films

Hsueh

Chiang

et al. 2011

J. Electrochem. Soc.

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“…In addition, they contain hydrogen terminations which will limit the growth of network structure, because H atoms are provided from the starting materials. The sp 2 domain size, the hardness, and the bulk modulus of films are reported to be dependent on the N 2 /CH 4 ratio [11].…”

Section: Introductionmentioning

confidence: 99%

“…The hardness of films has been found to vary when He, Ne, Ar, or Kr is added to the reaction system [7]. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD) methods have been used for synthesizing a-CN x films where the discharge of mixed gases of N 2 and hydrocarbons such as CH 4 and C 2 H 2 has been utilized under the medium and low pressure regions [8][9][10][11]. The [N]/([C] + [N]) ratios of a-CN x films produced by these PECVD methods have been reported to limit to 0.1 typically.…”

Section: Introductionmentioning

confidence: 99%

Carbon-K NEXAFS measurements of a-CN films formed from decomposition of BrCN in electron cyclotron resonance plasmas of He, Ne, and Ar

Wada

Koshimura

Niibe

et al. 2012

Journal of Non-Crystalline Solids

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Microstructures and mechanical properties of an a-C:N film as the interlayer and the outmost layer of a DLC-deposited Ti bio-alloy

Chou

Lin

2017

Ceramics International

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Effects of different nitrogen/methane ratios on the residual stress of a-C:N thin films prepared by plasma enhanced chemical vapor deposition

Cited by 5 publications

References 35 publications

Effects of Ammonia/Methane Mixtures on Characteristics of Plasma Enhanced Chemical Vapor Deposition n-Type Carbon Films

Effects of Ammonia/Methane Mixtures on Characteristics of Plasma Enhanced Chemical Vapor Deposition n-Type Carbon Films

Carbon-K NEXAFS measurements of a-CN films formed from decomposition of BrCN in electron cyclotron resonance plasmas of He, Ne, and Ar

Microstructures and mechanical properties of an a-C:N film as the interlayer and the outmost layer of a DLC-deposited Ti bio-alloy

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