2015
DOI: 10.1016/s1003-6326(15)63665-2
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Effects of deposition parameters on HFCVD diamond films growth on inner hole surfaces of WC–Co substrates

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Cited by 18 publications
(5 citation statements)
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“…For increasing methane concentrations and increasing process temperatures, the coating thicknesses after the deposition for 20 min also increase. This correlation is also reported for hot-filament CVD processes [14]. The increase of the coating thickness can be explained similarly to the crystal sizes.…”
Section: Discussionsupporting
confidence: 80%
See 1 more Smart Citation
“…For increasing methane concentrations and increasing process temperatures, the coating thicknesses after the deposition for 20 min also increase. This correlation is also reported for hot-filament CVD processes [14]. The increase of the coating thickness can be explained similarly to the crystal sizes.…”
Section: Discussionsupporting
confidence: 80%
“…However, with further increasing methane concentrations, the crystal size again reduces. This decline of the crystal size is also described for hot-filament CVD processes on WC-Co substrates [14]. At this point, the etching rate of hydrogen is not high enough anymore to completely etch the partly deposited amorphous bound carbon.…”
Section: Discussionsupporting
confidence: 52%
“…As can be observed in Figure 2 c, after acid etching pretreatment, the tool substrate surface is obviously roughened with many pits and holes. During the coating preparation process, these low-energy sites are beneficial to promote the nucleation and growth of diamond, while the rough substrate surface can increase the contact area between diamond grains and the substrate surface and enhance the mechanical occlusion effect between the coating and the substrate, thus improving the bonding force between the coating and the substrate [ 16 , 17 ].…”
Section: Experimental Results and Analysismentioning
confidence: 99%
“…In nucleation, UNCD growth and BDNCD growth processes, relatively lower pressure is selected in order to increase mean free paths of active radicals forming around hot filaments, for which such radicals will undergo fewer collisions when moving to substrate surfaces and induce much higher nucleation density. 25,26 Moreover, mainly owing to the more exothermic reactions caused by the more radicals moving to the substrate surfaces, especially the recombination of H atoms that contributes much to the substrate temperature, at the same filament temperature, substrate temperatures in the nucleation, UNCD growth and BDNCD growth processes are higher than those in the UMCD and BDMCD growth processes. The filament temperature is approximately measured by the Raytek MR1SCSF double-color integrated infrared thermometer (range: 600 °C–3000 °C), and the substrate temperature is measured by Type K thermocouple (range: −200 °C to 1300 °C).…”
Section: Methodsmentioning
confidence: 99%