Effects of deep subsurface damages on surface nanostructure formation in laser recovery of grinded single-crystal silicon wafers

Niitsu, Keiichiro; Yan, Jiwang

doi:10.1016/j.precisioneng.2019.12.005

Cited by 15 publications

(4 citation statements)

References 43 publications

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“…The Raman peaks of the unpolished and polished surfaces were 480 cm −1 and 477 cm −1 , respectively. Generally, the Raman peak shift indicates residual stress [ 18 ], and full width at half maximum (FWHM) indicates the crystallinity of a material [ 25 ]. On the polished surface, the amorphous silicon peak shifted to 477 cm −1 , indicating that the residual stress layer was removed by the polishing process.…”

Section: Resultsmentioning

confidence: 99%

“…The solid–liquid interface was protuberated in the center region owing to fluctuations created by continuous pulse shocks. The isotherms were partially compressed by the interface with a larger temperature gradient, generating a compressive force F a , which promoted the growth of micro-protrusions [ 18 ]. Owing to the temperature profile characteristics at the solid–liquid interface, the protrusions grew with the solid–liquid interface fluctuations under compression force F a , as shown schematically in Figure 12 b.…”

Section: Resultsmentioning

confidence: 99%

“…For instance, Her et al [ 17 ] fabricated an array of sharp conical spikes on silicon film surfaces by femtosecond laser irradiation with fluence of 10 kJ/m 2 . Niitsu and Yan [ 18 ] produced irregular nanodot structures on the surface of silicon wafers using a nanosecond pulsed laser while eliminating subsurface grinding damage. Kang et al [ 19 ] found that periodic surface structures with a height variation of 14–30 nm formed near the top surface when annealing a 45-nm-thick amorphous silicon thin film on a glass substrate using a Nd:YAG nanosecond laser.…”

Section: Introductionmentioning

confidence: 99%

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Influences of Initial Surface Conditions on Response Characteristics of Amorphous Silicon Films to Nanosecond Laser Irradiation

Ren

Zhang

2021

Micromachines

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Although laser-produced micro-/nano-structures have been extensively studied, the effects of the initial surface conditions on the formed micro-/nano-structures have rarely been investigated. In this study, through nanosecond pulsed laser irradiation of unpolished and polished amorphous silicon films, entirely different surface characteristics were observed. The effects of laser irradiation parameters, such as repetition frequency, beam overlap ratio, and scanning velocity, on the surface characteristics were investigated, followed by the characterization of surface roughness, energy-dispersive X-ray spectroscopy, and Raman spectroscopy of the irradiated surfaces. For the unpolished surface, novel micro-protrusions were generated after laser irradiation, whereas no such micro-protrusions were formed on the polished surface. The experimental results indicated that the height of the micro-protrusions could be tuned using laser irradiation parameters and that laser irradiation promoted the crystallization of the amorphous silicon film. Moreover, the formation mechanism of the micro-protrusions was linked to fluctuations of the solid–liquid interface caused by continuous laser pulse shocks at higher repetition frequencies. The findings of this study suggest important correlations between the initial surface conditions and micro-/nano-structure formation, which may enhance our fundamental understanding of the formation of micro-/nano-structures.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Influences of Initial Surface Conditions on Response Characteristics of Amorphous Silicon Films to Nanosecond Laser Irradiation

Ren

Zhang

2021

Micromachines

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“…Silicon carbide, gallium nitride, and aluminum nitride with excellent properties are considered as the third-generation semiconductor materials which will be the future of the semiconductor industry (Burk et al, 1999), but silicon-based materials, such as single-crystal silicon, still dominate the current semiconductor industry for the foreseeable years such that it is needed in continuously developing the advanced manufacturing technologies for these silicon-based materials (Niitsu and Yan, 2020;Bu et al, 2022).…”

Section: Introductionmentioning

confidence: 99%

Surface Form Accuracy Evaluation in Abrasive Lapping of Single-Crystal Silicon Wafers

Wang

Yang

2022

Front. Mater.

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Silicon-based materials still dominate the current semiconductor industry for the foreseeable years such that it is needed in continuously developing the related advanced manufacturing technologies. For the abrasive precision lapping of single-crystal silicon wafers, the surface form accuracy is very important which can significantly improve its efficiency and reduce the cost in the following ultra-precision polishing process. In this study, a novel driving system is proposed in the single-side planetary lapping process that could realize the irrational rotation speed ratio of the lapping plate to the workpiece, and it is found from the numerical qualitative and quantitative analysis that the uniformity of the particle trajectories moving on the target surface has been significantly improved using the irrational rotation speed ratio and hence resulting in the higher surface form accuracy than that driven by the rational rotation speed ratio. Moreover, an in-house developed irrational rotation speed ratio driving system has been designed for the experimental study, and it is found that the effect of the rational and irrational rotation speed ratios on surface roughness is not significant, while all the five essential values related to the surface form accuracy are better under the rotation speed ratio of i = 1.0772… than that under the rotation speed ratio of i = 1, which demonstrates that the irrational rotation speed ratio driving system has the advantage of being able to obtain a good surface form accuracy and agrees well with the numerical simulation results.

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Formation of Laser-Induced Periodic Surface Structures on Reaction-Bonded Silicon Carbide by Femtosecond Pulsed Laser Irradiation

Meshram

Yan²

2023

Nanomanuf Metrol

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Reaction-bonded silicon carbide (RB-SiC) is an excellent engineering material with high hardness, stiffness, and resistance to chemical wear. However, its widespread use is hindered due to the properties mentioned above, making it difficult to machine functional surface structures through mechanical and chemical methods. This study investigated the fundamental characteristics of laser-induced periodic surface structures (LIPSSs) on RB-SiC via femtosecond pulsed laser irradiation at a wavelength of 1028 nm. Low-spatial-frequency LIPSS (LSFL) and high-spatial-frequency LIPSS (HSFL) formed on the surface along directions perpendicular to the laser polarization. SiC grains surrounded by a large amount of Si show a reduced threshold for LIPSS formation. By varying laser fluence and scanning speed, HSFL–LSFL hybrid structures were generated on the SiC grains. Transmission electron microscopy observations and Raman spectroscopy were carried out to understand the formation mechanism of the hybrid LIPSS. A possible mechanism based on the generation of multiple surface electromagnetic waves due to the nonlinear response of SiC was proposed to explain the hybrid structure formation. Furthermore, the direction of laser scanning with respect to laser polarization affects the uniformity of the generated LIPSS.

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Effects of deep subsurface damages on surface nanostructure formation in laser recovery of grinded single-crystal silicon wafers

Cited by 15 publications

References 43 publications

Influences of Initial Surface Conditions on Response Characteristics of Amorphous Silicon Films to Nanosecond Laser Irradiation

Influences of Initial Surface Conditions on Response Characteristics of Amorphous Silicon Films to Nanosecond Laser Irradiation

Surface Form Accuracy Evaluation in Abrasive Lapping of Single-Crystal Silicon Wafers

Formation of Laser-Induced Periodic Surface Structures on Reaction-Bonded Silicon Carbide by Femtosecond Pulsed Laser Irradiation

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