Effects of Deep Level States Generated by Mg-Ion Implantation on Electrical Properties of GaN MOS Diodes before Activation Annealing

Kamoshida, Ryo

doi:10.7567/ssdm.2019.ps-4-16

Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials 2019

DOI: 10.7567/ssdm.2019.ps-4-16

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Effects of Deep Level States Generated by Mg-Ion Implantation on Electrical Properties of GaN MOS Diodes before Activation Annealing

Ryo Kamoshida¹

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Effects of Deep Level States Generated by Mg-Ion Implantation on Electrical Properties of GaN MOS Diodes before Activation Annealing

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