Effects of CW CO<sub>2</sub> Laser Annealing on Indium Tin Oxide Thin Films Characteristics

Abstract

In this work ITO thin film annealing was carried out using a CW CO 2 laser beam for ITO thin film annealing over a 1 cm 2 area with a temperature higher than 250˚C to obtain ITO grains with excellent structural quality thin films. The obtained ITO films were characterized for crystallization, surface morphology, electrical and optical properties, which has theoretical significance and application value. ITO thin films are deposited on glass substrates by sputter coater system (RF) from a high density target (In 2 O 3-SnO 2 , 90-10 wt%). After deposition, ITO thin films have been irradiated by CW CO 2 laser (λ = 10.6 μm) with power ranging from 1 to 10 watt. These films were annealed at temperatures 250˚C, 350˚C, and 450˚C in the air for 20 minutes using different laser power. The main incentive was to develop a low temperature process for ITO thin films, which typically required a 350˚C anneal to crystallize and achieve optimum optical and electrical properties. The XRD results showed that 350˚C temperature laser annealing could crystallize ITO with a strong (222) preferred orientation and its grain size increased from 29.27 nm to 48.63 nm. The structure, optical transmission, energy gap, resistivity and sheet resistance of the ITO thin films were systematically investigated as a function of laser post annealing temperature. It was found that the lowest resistivity was 2.9 × 10 −4 Ω-cm and that sheet resistance was 14.5 Ω/sq. And the highest optical transmittance (98.65%) of ITO films was obtained at 350˚C annealing temperature.

Showerhead-assisted chemical vapor deposition of CsPbBr3 films for LED applications

“…All three CVD samples exhibit characteristic features indicating an orthorhombic CsPbBr 3 phase [29], as also observed in the solution-processed reference sample. The signal at 35.4° can be assigned to the (400) planes of ITO [30]. It can be seen that the CVD samples processed with PbBr 2 temperatures of 340 °C and 360 °C in addition show multiple reflections which are not observed for the reference film.…”

Seed Layer-Assisted Chemical Bath Deposition of Cu2O Nanoparticles on ITO-Coated Glass Substrates with Tunable Morphology, Crystallinity, and Optical Properties

“…The seeds pattern could be shown in gure (2) which did not appear a peak without annealing. This case an amorphous structure was indicated [54,60]. The XRD patterns of ITO seeds at laser annealing temperature appear diffraction pattern with different major peaks of (211), ( 222), (400), (440), and (622), according with ICSD Card No.…”

“…To calculate the direct optical band gap (Eg) of the Cu 2 O nanoparticles estimated by Tauc plots (Fig. 7): α hv = A ( hv -Eg ) 1/2 , where ν is the photon frequency, h is Planck's constant, A being a constant, α is the absorption coe cient, [65,54]. The band gap energies decreased from 2.107 eV to 2.282 eV for Cu 2 O lm at temperature of 70 ℃, as showed in Table 3.…”

“…Laser annealing using continuous or pulsed wave depends on various conditions that leads to melting surface of semiconductor lm as resulted from the absorption of light energy which converted to heating. This heat energy is transmitted to the electronic structure and then to phonons rapidly with less than of 1 Psec [54,55].…”

Microstructures and luminescent properties of CO2 laser annealed Y2O3:Eu3+ thin films grown on quartz fabric by electron beam evaporation

“…Lin et al 25 discovered that CO 2 laser annealing can obviously increase the luminescent properties of Si-rich SiO films. Alsultany 26 reported that CO 2 laser annealing can effectively improve the crystallinity of ITO thin films, and then lead to increased electrical and optical properties. It is a remarkable fact that rapid heating and cooling can change the morphology and crystallinity of the thin film, and then further influence its luminescent properties.…”