2015
DOI: 10.1016/j.mssp.2015.07.080
|View full text |Cite
|
Sign up to set email alerts
|

Effects of CuO film thickness on electrical properties of CuO/ZnO and CuO/ZnS hetero-junctions

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

0
5
0

Year Published

2016
2016
2024
2024

Publication Types

Select...
10

Relationship

0
10

Authors

Journals

citations
Cited by 34 publications
(7 citation statements)
references
References 23 publications
(26 reference statements)
0
5
0
Order By: Relevance
“…7,8 Therefore, one of the best solutions for fabricating oxide-based solar cells will be to study a ZnO/CuO heterojunction as a stable p-n junction. 3,9,10 Previously, few efforts have been focused on fabricating p-CuO/n-ZnO heterojunctions [11][12][13] even though simple estimates predict large valence band offsets (VBOs) and conduction band offsets (CBOs) between the two semiconductors. 14 Therefore, it is imperative to control the band alignments in CuO/ZnO for further enhancement of power conversion efficiency by altering conduction and valence band offsets.…”
Section: Introductionmentioning
confidence: 99%
“…7,8 Therefore, one of the best solutions for fabricating oxide-based solar cells will be to study a ZnO/CuO heterojunction as a stable p-n junction. 3,9,10 Previously, few efforts have been focused on fabricating p-CuO/n-ZnO heterojunctions [11][12][13] even though simple estimates predict large valence band offsets (VBOs) and conduction band offsets (CBOs) between the two semiconductors. 14 Therefore, it is imperative to control the band alignments in CuO/ZnO for further enhancement of power conversion efficiency by altering conduction and valence band offsets.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the photo-response effect in the reverse bias region is considerably higher than the forward bias region and the variation of photocurrent with light intensity was investigated in the reverse bias. 3 The density of impurities in semiconductors is one of the major parameters that can control the position of the Fermi level. It is oen possible to impart some desirable properties to a semiconductor by introducing a controlled quantity of suitable elemental impurities into it, either during its preparation or diffusing them aerwards through thermal or other treatments.…”
Section: Introductionmentioning
confidence: 99%
“…Photocatalytic heterogeneous innovation, which belongs to advanced oxidation processes, has emerged as a highly promising approach for the removal of organic pollutants in wastewater. It offers several advantages such as low cost, non-toxicity, low energy requirement, safety, reusability, and the ability to completely degrade organic compounds 29 . Among semiconductor oxides, ZnO is a widely used photocatalyst due to its easy accessibility and affordability 30 .…”
Section: Introductionmentioning
confidence: 99%