Effects of Cu Doping on CdTe Thin-Film Solar Cells in Substrate Configuration

Okamoto, Tetsuhito; Murata, Ayuki; Hayashi, Yutaro; Watanabe, Daiki

doi:10.7567/ssdm.2018.ps-6-06

Cited by 1 publication

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“…Figure 6 shows the cell parameters of the substrate-type CdTe solar cells as a function of the Cu concentration in DEGBE in the second Cu doping. 34) The cell parameters of the cells (a) without the heat treatment after the CdS deposition and without the second Cu doping, and (b) with the heat treatment and without the second Cu doping were also shown for comparison. The first Cu doping was performed at a Cu concentration of 50 ppm.…”

Section: Effects Of Second Cu Doping After the Heat Treatment Of The ...mentioning

confidence: 99%

“…Figure 7 shows the dependence of the depletion layer width at zero bias on the Cu concentration in DEGBE in the second Cu doping. 34) Depletion layer widths of the cells (a) without the heat treatment after the CdS deposition and without the second Cu doping, and (b) with the heat treatment and without the second Cu doping are also shown for comparison. The depletion layer width in the case of (b) is much larger than that of (a).…”

Section: Effects Of Second Cu Doping After the Heat Treatment Of The ...mentioning

confidence: 99%

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Effects of Cu doping on CdTe thin-film solar cells in substrate configuration

Okamoto

Murata

Hayashi

et al. 2019

Jpn. J. Appl. Phys.

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Substrate-type CdTe thin-film solar cells with a carbon/CdTe/CdS/ZnO:Al/Ag structure were fabricated. For promoting the formation of the CdSxTe1-x mixed crystal layer in the CdS/CdTe interface, the heat treatment (a face-to-face annealing at 600 °C and the second CdCl2 treatment at 415 °C) of the CdS/CdTe:Cu structure was performed after the CdS deposition. Junction photoluminescence and the compositional depth profile revealed that the CdSxTe1-x mixed crystal layer was formed in the CdS/CdTe interface as a result of the heat treatment after the CdS deposition. The cell performance was slightly improved due to the heat treatment after the CdS deposition, but the conversion efficiency remained low (less than 2%), probably due to the decrease in the acceptor concentration in CdTe layer. For improving cell performance, Cu diffusion was performed after the heat treatment of the CdS/CdTe structure (second Cu doping), in addition to the Cu doping before the CdS deposition (first Cu doping). The conversion efficiency increased with increasing Cu concentration in the second Cu doping, and approximately 10% efficiency was achieved.

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Section: Effects Of Second Cu Doping After the Heat Treatment Of The ...mentioning

confidence: 99%

Section: Effects Of Second Cu Doping After the Heat Treatment Of The ...mentioning

confidence: 99%