“…Many methods have been employed to optimize the optical, electrical, and magnetic properties of ZnO materials, and among them doping is considered as one of the most effective approaches. Thus, doping is used in order to change the band gap energy of ZnO, either by narrowing the band gap or by introducing energy levels in the band gap of semiconductor materials [17][18][19][20][21][22][23][24][25]. 3d transition metal (TM) ions such as Ti, V, Mn, Fe, Co, Ni, and Cu are generally preferred to substitute for the e-mail: ozlem.bilgili@deu.edu.tr cations of the host semiconductors.…”