2014
DOI: 10.1039/c4ra07134d
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Effects of Cu addition on band gap energy, density of state effective mass and charge transport properties in Bi2Te3 composites

Abstract: The effects of Cu addition on band gap energy, effective mass, and charge transport properties in n-type CuxBi2Te3 composites are presented.

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Cited by 30 publications
(7 citation statements)
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“…45,51 It is illustrated that the m* of these alloys slender-deviates from the single parabolic band model of pristine BiSbTe, which may relate to the enhanced carrier mobility in BiSbTe-AgBiSe 2 composites. Similar behaviors were newly reported in the p-type BiSbTe-Sb 2 O 3 , 52 Cu-doped Bi 2 Te 3 , 53 and n-type BiTeSe-Bi 2 Te 3 54 composites. With the increasing content of AgBiSe 2 (x > 0.2), the DOS effective mass m* of BiSbTe-x AgBiSe 2 composites slightly decreases.…”
Section: Resultssupporting
confidence: 86%
“…45,51 It is illustrated that the m* of these alloys slender-deviates from the single parabolic band model of pristine BiSbTe, which may relate to the enhanced carrier mobility in BiSbTe-AgBiSe 2 composites. Similar behaviors were newly reported in the p-type BiSbTe-Sb 2 O 3 , 52 Cu-doped Bi 2 Te 3 , 53 and n-type BiTeSe-Bi 2 Te 3 54 composites. With the increasing content of AgBiSe 2 (x > 0.2), the DOS effective mass m* of BiSbTe-x AgBiSe 2 composites slightly decreases.…”
Section: Resultssupporting
confidence: 86%
“… 64 A considerably low power factor was obtained when compared to the result (5.3 mW m –1 K –2 ) reported for Cu x Bi 2 (Te 0.9 Se 0.1 ) 3 , which may be due to the limited donor contribution from the Cu-induced amorphous framework. 65 , 66 This indicates that the addition of Cu greatly tunes the power factor and the 1 mM Cu sample could be a better choice for further improvement of power factor and, ultimately, the figure of merit ( zT ).…”
Section: Resultsmentioning
confidence: 99%
“…Cu acts as a donor when intercalated into van der Waals gaps, [19][20][21][22] while it acts as an acceptor substituted into Bi sites in Bi 2 Te 3 . [23][24][25] In this study, the influence of Cu addition in polycrystalline InSe alloys depending on the doping site (intercalation or substitution) was investigated by synthesizing Cu x InSe (x = 0, 0.01, 0.02, 0.03, and 0.05) and In 1Ày Cu y Se (y = 0, 0.01, 0.02, 0.03, and 0.05) samples, as Cu can be intercalated into van der Waals gaps or substituted at In sites in InSe. 26 Electrical and thermal properties, including s, S, and k tot , were evaluated.…”
Section: Introductionmentioning
confidence: 99%
“…Cu acts as a donor when intercalated into van der Waals gaps, 19–22 while it acts as an acceptor substituted into Bi sites in Bi 2 Te 3 . 23–25…”
Section: Introductionmentioning
confidence: 99%