Effects of Crystallization Annealing Sequence for SrBi2Ta2O9 (SBT) Film on Pt/SBT Interface Morphology and Electrical Properties of Ferroelectric Capacitor

Yang, Woo Seok; Yeom, Seung Jin; Kim, Nam Kyeong; Kweon, Soon Yong; Roh, Jae–Sung

doi:10.1143/jjap.39.5465

Cited by 17 publications

(10 citation statements)

References 5 publications

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“…In some cases, the effect of the electrode brings about modifications of the microstructure of the ferroelectric film and in some cases, the electrode directly controls the properties. [7][8][9] An SBT layer must be annealed in oxygen ambient after deposition. This immediately limits the choice of electrodes, particularly those for the bottom electrodes.…”

Section: Introductionmentioning

confidence: 99%

Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate

Kweon¹,

Choi²,

Yeom

et al. 2001

Jpn. J. Appl. Phys.

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The stress dependence of platinum hillock formation during post thermal cycling was investigated in Pt/Ti electrode stacks. Annealing temperatures were varied from room temperature (RT) to 650 • C. High compressive stress was generated during electrode annealing by the Ti diffusion into the platinum layer followed by oxidation in the platinum grain boundaries. The compressive stress was the major driving force for the hillock formation on the platinum surface. Thus, the Ti glue layer was oxidized before platinum deposition to reduce the Ti diffusion. The Pt/TiO x electrode stack retained its smooth platinum surface after the electrode annealing of 650 • C for 30 min in O 2. The Pt/TiO x interface remained flat even after the ferroelectric annealing at 800 • C, which was performed after SrBi 2 Ta 2 O 9 (SBT) deposition. Moreover, the remanent polarization (2P r) of the SBT capacitor was increased to 17 µC/cm 2 on the Pt/TiO x electrode stack, up from 13 µC/cm 2 , which was the value on the Pt/Ti electrode stack.

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Section: Introductionmentioning

confidence: 99%

Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate

Kweon¹,

Choi²,

Yeom

et al. 2001

Jpn. J. Appl. Phys.

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“…11 Miura 12 and Yang et al 13 showed that the SBN phase was crystallized via a metastable fluoritelike phase in a cubic structure. In this system, stoichiometric deviations can occur, leading to intermediary pyrochlore and fluorite phases.…”

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confidence: 99%

Photoluminescent behavior of SrBi2Nb2O9 powders explained by means of β-Bi2O3 phase

Volanti

Cavalcante

Paris

et al. 2007

Applied Physics Letters

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Photoluminescence (PL) behavior of SrBi2Nb2O9 (SBN) powders was explained by means of β-Bi2O3 phase on the SBN lattice. Oxygen vacancies and recombination of electrons holes in the valence band lead to the formation of [NbO5∙VOx], [NbO5∙VO•] and [NbO5∙VO••] complex clusters which are the main reason for the PL at room temperature. X-ray diffraction and Fourier transform Raman spectroscopy were used as tools to investigate the structural changes in SBN lattice allowing to correlate [NbO5∙VO•]∕[NbO6]′ ratio with the evolution of the visible PL emission in the SBN powders.

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“…On the other hand, it has been well known that traditional ferroelectric materials such as SrBi2Ta2O9 (SBT), Bi3.25La0.75Ti3O12 (BLT), and PbZr0.52TiO0.48O3 (PZT) are really attractive in electronic devices application. For instance, SBT thin films possess a low leakage current but a small remnant polarization and high crystallization temperature [8], PZT thin films have a large remnant ________ polarization and lower crystallization temperature, but a large leakage current [9,10]. As a trade-off material, BLT thin films involve a medium level of leakage current, remnant polarization and crystallization temperature between SBT and PZT thin films [11].…”

Section: Introduction mentioning

confidence: 99%

Demonstration on Ferroelectric-gate Thin Film Transistor NAND-type Array with Disturbance-free Operation

Trinh¹

2019

MaP

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A novel concept of NAND memory array has been proposed by using only ferroelectric-gate thin film transistors (FGTs), whose structure is constructed from a sol-gel ITO channel and a sol-gel stacked ferroelectric between Bi3.25La0.75Ti3O12 and PbZr0.52TiO0.48O3 (BLT/PZT) gate insulator. Interestingly, ferroelectric cells with a wide memory window of 3 V and a large on/off current ratio of 6 orders, have been successfully integrated in a NAND memory circuit. To protect data writing or reading from disturbance, ferroelectric transistor cells are directly used, instead of paraelectric transistor cells as usual. As a result, we have verified disturbance-free operation for data reading and writing, with a small loss of the memory state and a low power consumption, in principle. Keywords: ITO, PZT, NAND, FeRAM, ferroelectric.

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Effects of Crystallization Annealing Sequence for SrBi₂Ta₂O₉ (SBT) Film on Pt/SBT Interface Morphology and Electrical Properties of Ferroelectric Capacitor

Cited by 17 publications

References 5 publications

Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate

Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate

Photoluminescent behavior of SrBi2Nb2O9 powders explained by means of β-Bi2O3 phase

Demonstration on Ferroelectric-gate Thin Film Transistor NAND-type Array with Disturbance-free Operation

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