2012
DOI: 10.1016/j.msea.2012.02.079
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Effects of crystal orientation on the tensile and shear deformation of nickel–silicon interfaces: A molecular dynamics simulation

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Cited by 8 publications
(2 citation statements)
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“…The orientation with the lowest value of the single defect decay obtains the highest strength resistance to the decay caused by the defect. The results of Table 4 show that the mechanical properties of [111] orientation are the highest and the mechanical properties of [100] orientation are the lowest, because the highest tensile strength is obtained for interfaces with the highest plane density and the lowest atomic disorder [ 40 ]. A higher yield strength profits the high-speed cutting as it increases the cutting efficiency.…”
Section: Resultsmentioning
confidence: 99%
“…The orientation with the lowest value of the single defect decay obtains the highest strength resistance to the decay caused by the defect. The results of Table 4 show that the mechanical properties of [111] orientation are the highest and the mechanical properties of [100] orientation are the lowest, because the highest tensile strength is obtained for interfaces with the highest plane density and the lowest atomic disorder [ 40 ]. A higher yield strength profits the high-speed cutting as it increases the cutting efficiency.…”
Section: Resultsmentioning
confidence: 99%
“…For instance, Ward et al [1] used the MD method and modified embedded atom method (MEAM) potential function to illustrate the effect of the crystal orientation of Al and Si in the deformation of Al/Si interface. The relationship between the strength of interface, the planar density and the width of disorder zone of Si/Ni interface was described by Amini et al [2]. Employing an embedded atom method (EAM) potential, they investigated the deformation mechanisms of the interface under tensile and shear loadings along various crystal orientations.…”
Section: Introductionmentioning
confidence: 99%