Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing

Wang, M.T; Tsai, Ming-Shih; Liu, C; Tseng, Wei–Tsu; Chang, T. C.; Chen, L.J; Chen, M.C

doi:10.1016/s0040-6090(97)00500-2

Cited by 58 publications

(39 citation statements)

References 13 publications

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“…Secondly, the incomplete passivation in acidic solutions could cause local galvanic corrosion. As is reported in literature, the surface oxide passivation film is incomplete and the copper only has patches (islands) of Cu 2 O and no CuO at low oxidizer concentration [25,50]. In addition, the Raman spectra in Fig.…”

Section: Corrosion Behavior Of Copper In Periodate-based Solutionsupporting

confidence: 67%

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

et al. 2015

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Copper chemical mechanical polishing (CMP) in barrier layer slurries with periodate as oxidant has not been intensively studied. This work presents an investigation into copper tribocorrosion in potassium periodatebased slurries during CMP. The research focused on copper tribocorrosion behavior, the surface chemical and electrochemical reaction products, and the electrochemical mechanism during CMP. The copper surface film was characterized by Raman spectra experiments. Tribocorrosion tests combined with CMP chemical experiments were conducted to study the tribochemical behavior and wearaccelerated corrosion effect. The results show that copper corrosion is more severe in acid solutions than in alkaline conditions. The copper surface is mainly passivated with copper oxides, copper hydroxide, and copper iodide. Small amounts of copper iodate, copper periodate, and iodine could be detected under specific pH conditions. Abrasion could help to get a uniform passivation film on copper surface consisting of copper oxides, copper hydroxide, and copper iodide only. The material loss due to wear-accelerated corrosion during CMP was also investigated. The results show that under weakly alkaline conditions (pH 9 and pH 10), the wear-corrosion effect plays an important role in the total material loss due to corrosion. The wearaccelerated corrosion is mainly caused by the exposure of more cathodic reaction sites to the slurry for participation in the redox reaction and the local galvanic corrosion during the CMP process. The high wear corrosion proportion of the total corrosion (DI c /I cc ) could help to obtain a better surface quality and desirable material removal rate during CMP.

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Section: Corrosion Behavior Of Copper In Periodate-based Solutionsupporting

confidence: 67%

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

et al. 2015

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“…Practically, the studies involving nitric acid slurry were in a search for an optimum BTA concentration [27,30,31,39,40]. As was shown by Wang et al [40], copper corrosion rate decreased with increase in BTA concentration up to 0.01 M. Further increase in BTA concentration saturates the inhibiting effect.…”

Section: Nitric Acid (Hno 3 ) Based Cmp Slurrymentioning

confidence: 97%

Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective

Ein‐Eli

Starosvetsky

2007

Electrochimica Acta

173

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“…It is known that benzotriazole (BTA) inhibits the corrosion of metals and reduces the "dishing effect" [5,11,20,26]. We investigated the influence of different concentrations of BTA in the electrolyte on the quality of the planarized film.…”

Section: Bta Additivementioning

confidence: 99%

“…The recently developed multilayered PCB structure needs a supplementary copper planarization process due to its higher integration. In the microelectronic industry, the chemical mechanical polishing (CMP) process is widely adopted to polish the overgrown Cu layer, in which various slurries, abrasives, and additives are used [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Recently, some problems and limitations of this process have been reported, such as scratches, stress cracking, and corrosion of the copper, which are commonly caused by abrasives and additives in the slurries [1,5,9,11,17,20].…”

Section: Introductionmentioning

confidence: 99%

Study on electrochemical mechanical polishing process of copper circuit on PCB

Kulyk

et al. 2010

Korean J. Chem. Eng.

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As an alternative to conventional chemical mechanical polishing (CMP) for the planarization of copper layers on electronic circuits, the electrochemical mechanical polishing (ECMP) process in alkali-based solution was investigated in this work. The influence of the polishing pad materials on the polishing process was studied, and the hard polyurethane polishing pad was shown to eliminate the "dishing effect". The polishing conditions, such as the pad rotating speed, concentration of H 2 O 2 , and the amount of BTA additives were optimized to control the planarization performance. As a result, good planarization uniformity was obtained not only in small scale (30 µm) trenches but also in very large scale (a few mm) patterns with a single step ECMP process.

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Effects of corrosion environments on the surface finishing of copper chemical mechanical polishing

Cited by 58 publications

References 13 publications

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Review on copper chemical–mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI)—An electrochemical perspective

Study on electrochemical mechanical polishing process of copper circuit on PCB

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