Abstract:We studied theoretically the evolution of excitonic properties of GaSb quantum ring located inside the AlAs/GaAs/InGaAs/AlAs double quantum well with the wells (GaAs and InGaAs) thicknesses. The quantum ring is placed between the wells. In this type II nanostructure, the hole is confined inside the quantum ring and the electron is confined in the GaAs and InGaAs layers. The hole and the electron states were computed using the effective mass and the Hartree approximations. Then, the exciton energy, binding ener… Show more
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