Effects of Confinement on the Coupling between Nitrogen and Band States in InGaAs1?xNx/GaAs (x ? 0.025) Structures: Pressure and Temperature Studies

Choulis, Stelios A.; Weinstein, B. A.; Hosea, T. J. C.; Kamal-Saadi, M.; O'Reily, E.P.; Adams, A.R.; Stolz, W.

doi:10.1002/1521-3951(200101)223:1<151::aid-pssb151>3.0.co;2-e

Cited by 13 publications

(1 citation statement)

References 24 publications

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“…The hydrostatic pressure dependence of optical gain, carrier confinement potentials, effective masses, PL intensity, and output power for InGaAsN/GaAs QW laser diodes have been addressed both theoretically and experimentally . There are also numerous reports on the study of InGaAsN/GaAs QD based laser diodes operating in the 1.3–1.55 μm wavelength regime .…”

Section: Introductionmentioning

confidence: 99%

Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications

Mal

Jayarubi²,

Das³

et al. 2018

Physica Status Solidi (b)

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The hydrostatic pressure induced band diagram of an InGaAsN/GaAs spherical quantum dot (QD) system is theoretically calculated using an expanded form of standard 8 band k · p Hamiltonian. The band parameters including energy gap, band offsets, and effective masses of electron and hole as a function of hydrostatic pressure are extracted using 10 band k · p model to calculate optical gain, threshold current density, and confined exciton binding energies of the QD system for the possible potential applications in 1.3–1.55 μm laser diodes. The optical gain increases with the increase in hydrostatic pressure up to 30 kbar and eventually decreases for further application of higher pressures. This effect is not usually observed in InGaAsN/GaAs quantum wells owing to the strong dependence of hole and electron effective masses with the hydrostatic pressure. A relative blue shift is observed in the gain spectra due to the increase in hydrostatic pressure or carrier concentration whereas a redshift is observed due to the increase in geometrical dimensions or impurity concentration which helps in estimating the range of operation of InGaAsN/GaAs QD based devices. The obtained binding energies, threshold current densities, and strain within the QDs help in understanding the influence of pressure and dot radius on these parameters.

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Section: Introductionmentioning

confidence: 99%

Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications

Mal

Jayarubi²,

Das³

et al. 2018

Physica Status Solidi (b)

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Interaction Strength between the Highly Localised Nitrogen States and the Extended Semiconductor Matrix States in GaInNAs

Potter

Balkan

Marie

et al. 2001

phys. stat. sol. (a)

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Subject classification: 71.20.Nr; 78.55.Cr; S7.15 We have investigated the temperature dependence of photoluminescence (PL) emission from sequentially grown Ga 0.8 In 0.2 As and Ga 0.8 In 0.2 N 0.015 As 0.985 quantum wells between 2 K and room temperature. A significant reduction in the temperature dependence of the GaInNAs bandgap compared to nitrogen-free GaInAs is observed. The results are analysed using the band-anticrossing model, which accurately predicts the temperature dependence of the GaInNAs energy gap from the behaviour of the GaInAs energy gap. We also compare the band-anticrossing interaction parameter C NM used to fit our data with other published values for GaNAs and GaInNAs. The results suggest that C NM may not be independent of indium fraction.

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Pressure and k · p studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wells

Choulis

Hosea

Tomić

et al. 2003

Physica Status Solidi (b)

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We report pressure dependent photomodulated reflectance (PR) measurements on a series of dilute-N InGaNAs/GaAs multiple quantum wells (MQWs). Our experimental results indicate the presence of important N-related disorder effects due to different nearest-neighbour N-cation configurations The quantum well transition energies obtained from the PR spectra are modelled using a realistic 10-band k · p Hamiltonian that includes tight-binding-based energies and coupling parameters for the N-levels. By matching experiment with theory we are able to determine accurately the band structure and thus predict some important material parameters for dilute-N InGaAsN alloys.Introduction The ability to calculate effective masses and conduction band offsets is important for designing laser devices. Accurate knowledge of the band structure of the component materials is the first step to identifying these parameters. Although this can be a much easier procedure for well-known materials, it is much more difficult task for novel systems such as InGaNAs [1].InGaNAs differs considerably from the conventional III-V alloys and exhibits striking new properties [2], some of which are reviewed in this paper. In this new class of dilute-N III-N-V semiconductor alloys, modification in the band structure is achieved by N forming localised states which interact with the conduction band (CB) edge of the host semiconductor [3]. To investigate this complex band formation, modulation spectroscopy as a function of pressure, has proved to be a very useful tool [2][3][4]. Previously we reported the dramatic effects of increasing N-incorporation on the quantum well (QW) interband energies including negative bandgap-bowing, smaller total temperature variation, and strong decrease in the rate of pressure-shift (reduced linear shifts with larger sub-linear components) [4]. Here, we seek to gain a more comprehensive picture of the influence of nitrogen on the confined levels in In y Ga 1-y As 1-x N x /GaAs multiple quantum wells (QWs), including the effects of disorder due to different nearest-neighbour N-cation configurations [5]. We determine the band structure of dilute-N InGaNAs/GaAs (0 ≤ x ≤ 4.3%) MQWs, by combined pressure dependent photomodulated reflectance (PR) measurements and theoretical k · p studies. The accurate determination of the band-structure allows us to

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Effects of Confinement on the Coupling between Nitrogen and Band States in InGaAs1?xNx/GaAs (x ? 0.025) Structures: Pressure and Temperature Studies

Cited by 13 publications

References 24 publications

Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications

Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications

Interaction Strength between the Highly Localised Nitrogen States and the Extended Semiconductor Matrix States in GaInNAs

Pressure and k · p studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wells

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