2019
DOI: 10.1016/j.commatsci.2019.109172
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Effects of co-doping on electronic structure and optical properties of 3C-SiC from first-principles method

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Cited by 6 publications
(1 citation statement)
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“…The increase in the I on with a decrease in the UV wavelength can be explained through the transmittance and the absorption coefficient of the 3C-SiC [37]. The absorption coefficient of the 3C-SiC peaks in the deep UV region (100-200 nm) [38]. As the wavelength of the incident light increases, the transmittance of the 3C-SiC layer increases rapidly and slows down near the visible range (∼400 nm) [39].…”
Section: Resultsmentioning
confidence: 99%
“…The increase in the I on with a decrease in the UV wavelength can be explained through the transmittance and the absorption coefficient of the 3C-SiC [37]. The absorption coefficient of the 3C-SiC peaks in the deep UV region (100-200 nm) [38]. As the wavelength of the incident light increases, the transmittance of the 3C-SiC layer increases rapidly and slows down near the visible range (∼400 nm) [39].…”
Section: Resultsmentioning
confidence: 99%