Effects of Charge Bump on High-Frequency Characteristics of α-SiC-based Double-drift ATT Diodes at Millimeter-wave Window Frequencies

Mukherjee, Moumita; Mazumder, N.

doi:10.4103/0377-2063.54899

Cited by 10 publications

(5 citation statements)

References 17 publications

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“…The linear rise of the electric field profile in the depletion zone of the diodes indicate that the diodes are free from severe space charge effect at the operating bias current densities (J 0,4H−SiCdiode = 7.5 × 10 10 A m −2 ; J 0,6H−SiCdiode = 6.5 × 10 10 A m −2 ). The nature of E(x) profiles of the THz IMPATTs is similar to that observed earlier in case of the MM-wave IMPATT [40]. However, the magnitude of E m is found to increase with increasing operating frequency as the width of active layer decreases with increasing frequency.…”

Section: Comparison Of Static and Dynamic Characteristics Of 4h-sic-a...supporting

confidence: 85%

α-SiC nanoscale transit-time diodes: performance of the photo-irradiated terahertz sources at elevated temperature

Mukherjee¹,

Mazumder²,

Roy³

2010

Semicond. Sci. Technol.

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The effects of elevated junction temperature on the terahertz (THz) frequency characteristics of α-(hexagonal, 4H and 6H) silicon carbide (SiC) based double-drift region (DDR, p ++ p n n ++ type) impact ionization avalanche transit-time (IMPATT) devices are studied and compared for the first time through simulation experiments. This study reveals that at 300 K < T < 600 K, a 4H-SiC IMPATT diode may yield 3.5 W of output power (efficiency (η) ∼ 8.6%) at 1.3 THz, while its 6H-SiC counterpart can deliver 3 W of output power (η = 6.3%) at 1.2 THz. It is interesting to observe that at elevated temperature, the performance of a 6H-SiC IMPATT diode degrades more in comparison with its 4H-SiC counterpart. These comparative analyses reveal the superiority of 4H-SiC diodes over their 6H-SiC counterparts, and thus establish the potential of the former as a high-power THz IMPATT oscillator even in harsh environments. Mobile space charge effects and the effect of positive series resistance on the high-temperature performance of the THz devices are also simulated, and it is found that series resistance reduces the output power level of the diodes by at least 15.0%. Moreover, the effects of increased junction temperature on the photo-sensitivity of top mounted (TM) and flip chip (FC) α-SiC IMPATTs are also investigated using a modified simulation technique. The device operating frequencies, under TM illumination configuration, shifts upward by at least 40.0 GHz, whereas the operating frequency shifts upward by at least 100.0 GHz under FC illumination configuration. The simulation results and the proposed experimental methodology presented here may be used for realizing optically controlled α-SiC transit-time devices for application in THz communication.

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Section: Comparison Of Static and Dynamic Characteristics Of 4h-sic-a...supporting

confidence: 85%

α-SiC nanoscale transit-time diodes: performance of the photo-irradiated terahertz sources at elevated temperature

Mukherjee¹,

Mazumder²,

Roy³

2010

Semicond. Sci. Technol.

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“…The comparison reveals that 4H-SiC based SDR diodes are capable of generating a RF power of 870.0 x 10 9 Wm -2 with an efficiency of 20.0 %, far better than their Si counterpart ]. Thereafter, the DDR IMPATT diodes are designed and studied thoroughly by Mukherjee et al (2009 a) at three different window frequencies: 35 GHz (Ka-band), 140 GHz (D-band) and 220 GHz (Yband) and the corresponding admittance plots are shown in Figures 6 (a-c). Comparative studies of SLHL and flat-profile diodes at MM-wave window frequencies by Mukherjee et al (2009) reveal that the Quasi Read SLHL diodes are superior to their flat profile counterparts in terms of power output, efficiency and negative-resistance.…”

Section: Superiority Of Wbg Semiconductor Based Impatts Over Conventimentioning

confidence: 99%

“…Thereafter, the DDR IMPATT diodes are designed and studied thoroughly by Mukherjee et al (2009 a) at three different window frequencies: 35 GHz (Ka-band), 140 GHz (D-band) and 220 GHz (Yband) and the corresponding admittance plots are shown in Figures 6 (a-c). Comparative studies of SLHL and flat-profile diodes at MM-wave window frequencies by Mukherjee et al (2009) reveal that the Quasi Read SLHL diodes are superior to their flat profile counterparts in terms of power output, efficiency and negative-resistance. Mukherjee et al (2007 b) has made a systematic study on the performance of the IMPATTs designed at higher THz frequencies: 0.5 THz and 1.85 THz.…”

Section: Superiority Of Wbg Semiconductor Based Impatts Over Conventimentioning

confidence: 99%

Wide Band Gap Semiconductor Based Highpower ATT Diodes In The MM-wave and THz Regime: Device Reliability, Experimental Feasibility and Photo-sensitivity

Mukherjee¹

2010

Advanced Microwave and Millimeter Wave Technologies Semiconductor Devices Circuits and Systems

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“…Higher-resolution, higher penetrating power through cloud, dust, fog, etc., requirement of low voltage power supplies and reduced system size, etc., are some important advantages of mm-wave and sub-mm-wave frequencies (Chang, Hellum, Paul, & Weller, 1977;Gray, Kikushima, Morentc, & Wagner, 1969;Midford & Bernick, 1979). The low DC to RF conversion efficiency of the IMPATT devices operating at these frequencies can be improved through the use of impurity bumps in the doping profile of the diode leading to quasi-Read structures such as hi-lo and lo-hi-lo (Mukherjee & Mazumder, 2009). Also semiconducting materials like InP, SiC and GaN have immense potential to realise high power from IMPATTs based on those materials (Acharyya & Banerjee, 2013, 2012aBanerjee, Pati, & Roy, 1988;Mukherjee, Banerjee, & Banerjee, 2010;Mukherjee & Mazumder, 2007).…”

Section: Introductionmentioning

confidence: 99%

Effects of tunnelling current on millimetre-wave IMPATT devices

Acharyya

Mukherjee

Banerjee

2014

International Journal of Electronics

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In this paper, the influence of tunnelling on the RF performance of millimetre-wave (mm-wave) impact ionisation avalanche transit time (IMPATT) diodes operating in mixed tunnelling and avalanche transit time mode is studied by taking into account the parasitic series resistance of the device. The results show that the parasitic resistance of mm-wave IMPATTs increases and consequently the power delivered by the device decreases due to the consequence of band-to-band tunnelling. The critical background doping concentration and operating frequency are found to be 5.0 × 10 23 m −3 and 260 GHz, respectively, above which the influence of tunnelling on the RF performance of the device becomes predominant.

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Effects of Charge Bump on High-Frequency Characteristics of α-SiC-based Double-drift ATT Diodes at Millimeter-wave Window Frequencies

Cited by 10 publications

References 17 publications

α-SiC nanoscale transit-time diodes: performance of the photo-irradiated terahertz sources at elevated temperature

α-SiC nanoscale transit-time diodes: performance of the photo-irradiated terahertz sources at elevated temperature

Wide Band Gap Semiconductor Based Highpower ATT Diodes In The MM-wave and THz Regime: Device Reliability, Experimental Feasibility and Photo-sensitivity

Effects of tunnelling current on millimetre-wave IMPATT devices

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