Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors

Li, Qi; Dong, Junchen; Han, Dedong; Wang, Yi

doi:10.3390/membranes11120929

Cited by 18 publications

(8 citation statements)

References 30 publications

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“…With the increase of channel thickness, the carrier concentration increases, causing the decrease of I on /I off and the negative shift of V th of the device. [36,40] The dielectric properties of the Al 2 O 3 film are investigated in Figure S8 (Supporting Information). It exhibits an areal capacitance value of ≈850 nF cm -2 at 40 Hz (Figure S8a, Supporting Information), a low leakage current density of 2 × 10 −5 A cm −2 at 1.0 MV cm −1 , and a high breakdown electric field of 2.9 MV cm −1 (Figure S8b, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

Printable Coffee‐Ring Structures for Highly Uniform All‐Oxide Optoelectronic Synaptic Transistors

Liang

Wang

Ren

et al. 2022

Advanced Optical Materials

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based on conventional image sensors and data processing systems faces severe challenges in terms of efficiency and power consumption due to the physically separated memory and central processing unit (CPU), which are particularly important in the era of artificial intelligence (AI). [4,6] Fortunately, optoelectronic synapses are neuromorphic computing devices that rationally incorporate optical sensing, processing, and memory functions, [7][8][9][10] thereby enabling artificial visual systems to be realized with low power consumption and low mutual interference. [11][12][13] Optoelectronic synaptic transistors are one type of optoelectronic synapses that are widely applied in artificial visual systems due to their linear synaptic plasticity, configurable electrical modulation, and nondestructive operations. [14] Meanwhile, their multi-terminal device structure naturally permits the construction of large-area, high-density synaptic transistor arrays, capable of precise pixel addressing without sneak-path leakages for image perception and processing. [8,13,15] Despite these advantages, optoelectronic synaptic transistors with nanomaterials and/or nanostructured channels are often reliant on vacuum-based top-down semiconductor fabrication techniques, which are characterized by complicated processes, low efficiency, and high cost. [15,16] Printable oxide transistors have emerged as important optoelectronic synaptic devices to emulate the human visual cognitive system by integrating both photo-sensing and visual perception functions. However, the inferior electrical performance and low pixel density of printed oxide synaptic transistors impede their implementation of complex neuromorphic computing. Herein, a printable all-oxide optoelectronic synaptic transistor array based on a modified coffee-ring structure of indium tin oxide (ITO) is reported. The extraordinary structural design endows the printed ITO transistors with high device uniformity, outstanding electrical performance, and superior process efficiency. Furthermore, a 10 × 12 coffee-ring structure optoelectronic synaptic transistor array with a high spatial resolution (142 dpi) exhibits durable visual detection and memory behaviors. Meanwhile, an artificial neural network based on the coffee-ring structure synaptic transistors exhibits high accuracy in the recognition rate. These results promise the efficiency of the exceptional printing strategy in developing advanced optoelectronic synaptic transistors for artificial visual systems.

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Section: Resultsmentioning

confidence: 99%

Printable Coffee‐Ring Structures for Highly Uniform All‐Oxide Optoelectronic Synaptic Transistors

Liang

Wang

Ren

et al. 2022

Advanced Optical Materials

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“…In this case, I ph is suppressed because the space available for carrier generation is limited and the channel resistance is high. [19][20][21] Reducing the carrier concentration (n) in the channel layer of TFT based UVPDs, or using a Schottky metals (e.g., Pt, 22,23) Au, 24) and Ni 25) ), or p-type MOSs (e.g., NiO, [26][27][28] MgO, 29) and Cr 2 O 3 30) ) as a capping layer (CL) on the channel surface (i.e. the back channel) have been demonstrated to mitigate the trade-off between I dark and I ph .…”

Section: Introductionmentioning

confidence: 99%

Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance

Ko,

Wang,

Chen

et al. 2024

Jpn. J. Appl. Phys.

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To improve the photodetection performance of thin-film transistor (TFT)-based ultraviolet photodetectors (UVPDs), using thick channel layers to promote photocurrent (Iph) or using thin channel layers to suppress dark current (Idark) is a typical trade-off. In this work, UVPDs based on oxygen-doped Si-Zn-Sn-O (SZTO) TFT with a stack of Pt/NiO capping layers (CLs) to release the trade-off between Idark and Iph are demonstrated. The Pt CL creates a wide depletion region in the channel layer to allow the use of thick channels, but still maintains low Idark, while the NiO CL forms a pn heterojunction to provide additional photogenerated carriers and enhance Iph under UV irradiation. Experimental results show that the proposed 95-nm-thick oxygen-doped SZTO TFT with a stack Pt/NiO dual CLs exhibits excellent photoresponsivity of 2026 A/W and photosensitivity of 9.3×107 A/A, which are about 76× and 82.5× higher than the conventional 45-nm-thick SZTO TFT under 275 nm UV irradiation.

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“…Recently, TFTs based on TCO have been extensively investigated for the purpose of achieving transparent and flexible displays [ 1 , 2 , 3 , 4 ]. Among the candidates of TCO, InSnO (ITO), and ZnO are considered to be promising channel materials of TFTs since they combine excellent electrical properties and high transmittance [ 5 , 6 ]. Furthermore, heterojunction TFTs, which have bilayer-structure channel, have currently drawn considerable attention.…”

Section: Introductionmentioning

confidence: 99%

Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors

Dong

Han

et al. 2022

Nanomaterials

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Transparent conductive oxides (TCO) have been extensively investigated as channel materials for thin-film transistors (TFTs). In this study, highly transparent and conductive InSnO (ITO) and ZnO films were deposited, and their material properties were studied in detail. Meanwhile, we fabricated ZnO/ITO heterojunction TFTs, and explored the effects of channel structures on the hump characteristics of ZnO/ITO TFTs. We found that Vhump–VON was negatively correlated with the thickness of the bottom ZnO layer (10, 20, 30, and 40 nm), while it was positively correlated with the thickness of the top ITO layer (3, 5, 7, and 9 nm), where Vhump is the gate voltage corresponding to the occurrence of the hump and VON is the turn-on voltage. The results demonstrated that carrier transport forms dual current paths through both the ZnO and ITO layers, synthetically determining the hump characteristics of the ZnO/ITO TFTs. Notably, the hump was effectively eliminated by reducing the ITO thickness to no more than 5 nm. Furthermore, the hump characteristics of the ZnO/ITO TFTs under positive gate-bias stress (PBS) were examined. This work broadens the practical application of TCO and provides a promising method for solving the hump phenomenon of oxide TFTs.

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Effects of Channel Thickness on Electrical Performance and Stability of High-Performance InSnO Thin-Film Transistors

Cited by 18 publications

References 30 publications

Printable Coffee‐Ring Structures for Highly Uniform All‐Oxide Optoelectronic Synaptic Transistors

Printable Coffee‐Ring Structures for Highly Uniform All‐Oxide Optoelectronic Synaptic Transistors

Using thin-film transistor with thick oxygen-doped Si–Zn–Sn–O channel and patterned Pt/NiO capping layer to enhance ultraviolet light sensing performance

Structural Engineering Effects on Hump Characteristics of ZnO/InSnO Heterojunction Thin-Film Transistors

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