Effects of Chamber Wall Conditions on Cl Concentration and Si Etch Rate Uniformity in Plasma Etching Reactors

Kim, Tae Won; Aydil, Eray S.

doi:10.1149/1.1578481

Cited by 40 publications

(22 citation statements)

References 38 publications

(61 reference statements)

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“…The small but non‐zero value observed for the OPL carrier (which should not show any signal) can be attributed to this line being situated in close proximity to other OES wavelengths. Literature sources have noted that SiCl x generation affects several aspects of Cl‐based etch processes, such as variation in Cl density due to decreased recombination on reactor walls and redeposition of SiClx on feature surfaces . XPS analysis was performed on blanket TaN coupons etched for three cycles using the baseline condition on Si and SiO x carriers to evaluate any changes in the chemical bonding at the surface.…”

Section: Resultsmentioning

confidence: 99%

Utilizing surface modification in plasma‐enhanced cyclic etching of tantalum nitride to surpass lithographic limits

Marchack

Hernandez

Walusiak

et al. 2019

Plasma Processes & Polymers

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Pitch subdivision of tantalum nitride (TaN) lines is demonstrated across a 200 mm wafer using a cyclic quasi‐atomic layer etch process in an inductively coupled plasma reactor. Chlorine (Cl2) and hydrogen (H 2) chemistries are introduced sequentially to an argon plasma in discrete steps to etch the TaN film. The starting lithographic pattern with critical dimension (CD) of approximately 82 nm and pitch of 200 nm thus yields lines of approximately 40 nm CD and 100 nm pitch with minimal line edge roughness increase. We identify a synergistic effect between H 2‐exposed TaN and Cl 2 plasma as contributing to this result, as well as a potential link to surface oxidation. Optical emission spectroscopy analysis of the plasma discharge is used to characterize reactive species densities and explain the observed changes in profile.

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Section: Resultsmentioning

confidence: 99%

Utilizing surface modification in plasma‐enhanced cyclic etching of tantalum nitride to surpass lithographic limits

Marchack

Hernandez

Walusiak

et al. 2019

Plasma Processes & Polymers

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“…It is well known that depositions on chamber walls chemically affect plasma and change etch properties over time. 15,29,30 In order to remove depositions from chamber walls and to keep etch properties the same, chamber should be cleaned periodically. This process inevitably changes plasma chemistry including plasma parameters.…”

Section: Chemical Effects On Electron Temperature and Ion Fluxmentioning

confidence: 99%

Non-invasive in situ plasma monitoring of reactive gases using the floating harmonic method for inductively coupled plasma etching application

Lee

Yoon

Kim

2013

Review of Scientific Instruments

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The floating harmonic method was developed for in situ plasma diagnostics of allowing real time measurement of electron temperature (Te) and ion flux (Jion) without contamination of the probe from surface modification by reactive species. In this study, this novel non-invasive diagnostic system was studied to characterize inductively coupled plasma of reactive gases monitoring Te and Jion for investigating the optimum plasma etching conditions and controlling of the real-time plasma surface reaction in the range of 200-900 W source power, 10-100 W bias power, and 3-15 mTorr chamber pressure, respectively.

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“…An important factor influencing the surface recombination rates and thus the materials processing rates is the so-called "conditioning" or "seasoning" of the surface following exposure to reactive plasmas [23][24][25][26]. For example, Kim and Aydil [27] investigated the consequences of reactor seasoning on the rate and uniformity of Si etching in an inductively coupled Cl 2 plasma. The maximum etch rate shifted from the center of the wafer in an unseasoned reactor to the edge of the wafer when the walls were fully passivated, in this case with a SiOCl x film.…”

Section: Introductionmentioning

confidence: 99%

Experimental and modeling study of O and Cl atoms surface recombination reactions in O2 and Cl2 plasmas

Stafford

Guha

Khare

et al. 2010

Pure and Applied Chemistry

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Abstract:In low-pressure plasmas commonly used in materials processing, plasma-wall inter actions play a crucial role in the evolution of the plasma properties both over time and across large-area wafers. We have recently studied the heterogeneous recombination of O and Cl atoms on reactor walls in O 2 and Cl 2 plasmas through both experiments and modeling. The Langmuir-Hinshelwood (i.e., delayed) recombination was investigated using a "spinning-wall" technique in which a portion of the substrate surface is periodically exposed to an inductively coupled plasma and to a differentially pumped chamber where either Auger electron spectroscopy (AES) or line-of-sight mass spectrometry (MS) is used to detect surface and desorbing species. In this paper, a review of the various effects driving the O and Cl atoms recombination dynamics on anodized aluminum (AA) and stainless steel (SS) surfaces is presented. It is shown that recombination probabilities, γ, can vary following plasma exposure due to surface conditioning. In Cl 2 plasmas, γ was also found to depend on the Cl-toCl 2 number density ratio, a mechanism ascribed to a competition for adsorption sites between Cl and Cl 2 . We have also determined the recombination rates of Cl atoms in Cl 2 high-density plasmas sustained by electromagnetic surface waves by comparing the measured degrees of dissociation of Cl 2 to those predicted by an isothermal fluid model. For a reactor with large SS and quartz surfaces exposed to the plasma, γ values and their dependence on the Cl-toCl 2 number density ratio were consistent with those obtained from the rotating substrate technique. Similar values were obtained for plasmas sustained in a quartz discharge tube. It is expected that for plasmas sustained in or adjacent to a silica tube or plate, the Cl atoms recombination coefficient becomes independent of chamber wall material due to reactor seasoning, producing a silicon-oxychloride layer.

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Effects of Chamber Wall Conditions on Cl Concentration and Si Etch Rate Uniformity in Plasma Etching Reactors

Cited by 40 publications

References 38 publications

Utilizing surface modification in plasma‐enhanced cyclic etching of tantalum nitride to surpass lithographic limits

Utilizing surface modification in plasma‐enhanced cyclic etching of tantalum nitride to surpass lithographic limits

Non-invasive in situ plasma monitoring of reactive gases using the floating harmonic method for inductively coupled plasma etching application

Experimental and modeling study of O and Cl atoms surface recombination reactions in O2 and Cl2 plasmas

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