Effects of cesium ion-implantation on mechanical and electrical properties of organosilicate low-k films

Abstract

The effects of cesium (Cs) ion-implantation on uncured plasma-enhanced chemical-vapor-deposited organosilicate low dielectric constant (low-k) (SiCOH) films have been investigated and compared with an ultraviolet (UV) cured film. The mechanical properties, including the elastic modulus and hardness, of the SiCOH low-k films are improved by up to 30% with Cs implantation, and further up to 52% after annealing at 400 °C in a N2 ambient for 1 h. These improvements are either comparable to or better than the effects of UV-curing. They are attributed to an enhancement of the Si-O-Si network structure. The k-value of the SiCOH films increased slightly after Cs implantation, and increased further after annealing. These increases are attributed to two carbon-loss mechanisms, i.e., the carbon loss due to Si-CH3 bond breakage from implanted Cs ions, and the carbon loss due to oxidation during the annealing. The time-zero dielectric breakdown strength was improved after the Cs implantation and the annealing, and was better than the UV-cured sample. These results indicate that Cs ion implantation could be a supplement to or a substitution for the currently used UV curing method for processing SiCOH low-k films.

Pengaruh Dosis Implantasi Ion Nitrogen Pada Sifat Kapasitasi Polimer PVDF Dan PVDF-HFP

“…Peningkatan nilai kapasitansi ini menunjukkan terjadinya perubahan pada struktur molekul polimer akibat dari ion nitrogen yang diimplantasikan. Polimer yang diimplantasi ion nitrogen memiliki perubahan sifat elektrik yang ditandai dengan meningkatnya nilai permitivitas bahan dielektrik (ɛ) yang sebanding dengan nilai kapasitansi [19,20]. Sedangkan penurunan nilai kapasitansi saat diimplantasi dengan ion hingga mencapai orde 10 16 ion/cm 2 menunjukkan bahwa struktur molekul ion mengalami kerusakan dengan area dan tingkat kedalaman yang lebih besar sehingga bersifat lebih konduktif dengan ditandai mulai berkurangnya nilai kapasitansi [21,22].…”

“…Peningkatan tersebut menunjukkan semakin bertambahnya ikatan rangkap karbon C=C setelah diimplantasi ion nitrogen. Sedangkan berkurangnya intensitas absorpsi pada dosis ion 1,41  10 18 ion/cm 2 diduga disebabkan degradasi ikatan molekul akibat distribusi kedalaman ion semakin besar [19].…”