Effects of CeO2 on the Si Precipitation Mechanism of SiCp/Al-Si Composite Prepared by Powder Metallurgy

Abstract

SiCp/Al-Si composites with different CeO2 contents were prepared by a powder metallurgy method. The effect of CeO2 content on the microstructure of the composites was studied. The mechanism of CeO2 on the precipitation of Si during sintering was analyzed by theoretical calculations. The results show that the appropriate amount of CeO2 can significantly refine the size of precipitated Si particles in the composite and increase the number of Si particles. With the increase of CeO2 content from 0 to 0.6 wt%, the number of Si particles precipitated in the composites increases gradually, and the average particle size of Si particles decreases gradually. When the CeO2 content is 0.6 wt%, the number of Si particles precipitated in the composites reaches the maximum, and the average particle size reaches the minimum. However, with the increase of CeO2 content from 0.6 wt% to 1.8 wt%, the number of Si particles precipitated in the composites began to decrease, and the average size of Si particles gradually increased. CeO2 can be used as heterogeneous nucleation substrate of precipitated Si, and the nucleation rate of precipitated Si on a CeO2 substrate is higher than that on an aluminum substrate. The proper addition of CeO2 can improve the nucleation efficiency of precipitated Si, thus increasing the amount and refining the size of precipitated Si.