Abstract:The effects of carbon incorporation on the thermal stability of the interfacial TiO2 layer and the electrical characteristics of Ti/TiO2/n-Ge contacts were investigated. The improved thermal stability and contact characteristics of Ti/TiO2/n-Ge contacts were characterized in terms of Schottky barrier height (SBH) and specific contact resistivity (ρc) using the Schottky diode and circular transmission line model (CTLM). The values of SBH and ρc increased after the rapid thermal annealing (RTA) above 550 ℃. The … Show more
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