2016
DOI: 10.1016/j.jeurceramsoc.2016.04.034
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Effects of carbon addition on the electrical properties of bulk silicon-oxycarbide ceramics

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Cited by 38 publications
(16 citation statements)
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“…This is attributed to an increase in the graphitization degree of the segregated carbon phase ( cf ., Figure ) as monitored by Raman spectroscopy, whereas the partitioning of the SiOC glass network, which typically occurs at temperatures beyond 1100‐1200°C, is thought to have less impact on the electrical conductivity . The amount of segregated carbon has also an impact on the absolute values of the electrical conductivity, as discussed above . Finally, the electrical conductivity is increasing with increasing the measurement temperature, indicating the semiconducting behavior of the sp 2 ‐carbon‐containing silicon oxycarbides.…”
Section: Properties Of Siocmentioning
confidence: 92%
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“…This is attributed to an increase in the graphitization degree of the segregated carbon phase ( cf ., Figure ) as monitored by Raman spectroscopy, whereas the partitioning of the SiOC glass network, which typically occurs at temperatures beyond 1100‐1200°C, is thought to have less impact on the electrical conductivity . The amount of segregated carbon has also an impact on the absolute values of the electrical conductivity, as discussed above . Finally, the electrical conductivity is increasing with increasing the measurement temperature, indicating the semiconducting behavior of the sp 2 ‐carbon‐containing silicon oxycarbides.…”
Section: Properties Of Siocmentioning
confidence: 92%
“…Above the percolation threshold, electron conduction was proposed as active mechanism. However, a recent study discussing Hall measurements of SiOC materials suggest the conduction via p‐type carriers in the segregated carbon phase . The percolation threshold (vol.%) of the segregated carbon phase is depending on two aspects: (a) the amount of segregated carbon; (b) the synthesis temperature, as the segregated carbon phase is proposed to evolve from basic structural units (BSU) to a high aspect phase with increasing temperature ( cf ., Figure ), thus for the lower fractions of segregated carbon in SiOC, higher synthesis temperature is needed in order to provide an electrical conductivity comparable to SiOC materials with large contents of carbon.…”
Section: Properties Of Siocmentioning
confidence: 99%
“…Information about the density and mobility of the dominant charge carrier type in the SiOC/C ceramic materials was obtained from measurements of the Hall effect. Figure 9 exhibited the carrier density (N) and mobility (µ) as a function of the carbon content for SiOC/C samples prepared at 1600 • C. Literature values of an SiOC/C synthesized at T = 1550 • C are displayed for comparison [76].…”
Section: Figurementioning
confidence: 99%
“…Silicon oxycarbide (SiOC), which consists of free carbon and SiO x C 4‐x units in a fractal network structure, has been widely studied due to its excellent thermal and mechanical properties . SiOC systems with various compositions and structures have been explored and applied in many novel fields, such as sensors, high‐temperature microelectromechanical systems, and thermal insulators .…”
Section: Introductionmentioning
confidence: 99%