Effects of carbide and nitride inclusions on diamond scribing of multicrystalline silicon for solar cells

Wu, Hao; Melkote, Shreyes N.; Danyluk, S.

doi:10.1016/j.precisioneng.2012.10.008

Cited by 12 publications

(5 citation statements)

References 14 publications

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“…Discontinuous chips are observed in the inset of Fig. 2(b) , which is in a good agreement with the previous reports performed at low speed scratching 20 . The final depth of the residual scratch at the onset of crack formation measured by SEM was 49 nm, as shown in the inset of Fig.…”

Section: Resultssupporting

confidence: 92%

“…Single-point diamond tip scratching on Si wafers is fundamental to explore the mechanism involved in wafering of solar cells, thus attracting attentions 17 19 20 21 . Three typical approaches for single-point diamond tip scratching consist of instrumented nanoscratching 17 , atomic force microscopy (AFM) scratching 19 , and precision motion stage scratching 20 . The instrumented nanoscratching is performed using a commercial TI900 TriboIndenter (Hysitron, USA).…”

mentioning

confidence: 99%

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A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut

Zhang

Guo

Wang

et al. 2015

Sci Rep

142

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In this study, a novel approach of high speed scratching is carried out on silicon (Si) wafers at nanoscale depths of cut to investigate the fundamental mechanisms in wafering of solar cells. The scratching is conducted on a Si wafer of 150 mm diameter with an ultraprecision grinder at a speed of 8.4 to 15 m/s. Single-point diamonds of a tip radius of 174, 324, and 786 nm, respectively, are used in the study. The study finds that at the onset of chip formation, an amorphous layer is formed at the topmost of the residual scratch, followed by the pristine crystalline lattice beneath. This is different from the previous findings in low speed scratching and high speed grinding, in which there is an amorphous layer at the top and a damaged layer underneath. The final width and depth of the residual scratch at the onset of chip formation measured vary from 288 to 316 nm, and from 49 to 62 nm, respectively. High pressure phases are absent from the scratch at the onset of either chip or crack formation.

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Section: Resultssupporting

confidence: 92%

mentioning

confidence: 99%

A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut

Zhang

Guo

Wang

et al. 2015

Sci Rep

142

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“…Dislocation density variation is correlated with variation in the fracture toughness, which affects the cutting characteristics . Cutting is also affected by carbide and nitride inclusions . In this paper, the effects of crystallographic defects in mc‐Si such as grain/twin boundaries on the scribed surface morphology are also investigated.…”

Section: Introductionmentioning

confidence: 99%

Effect of grit shape and crystal structure on damage in diamond wire scribing of silicon

et al. 2017

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Fundamental understanding of the fixed abrasive slicing of photovoltaic silicon wafers is crucial for producing low-cost wafers with superior surface quality and mechanical strength. With the goal of understanding the diamond wire sawing process, this paper investigates the scribing of mono-and multi-crystalline silicon by the abrasive grits on an actual diamond wire. Specifically, the effects of grit shape and silicon crystal structure on the resulting surface morphology, subsurface damage, and the critical depth of cut at which ductile-to-brittle transition occurs are investigated. Results show that surface cracking depends on the grit shape. Scribing across the grain and twin boundaries in multi-crystalline silicon impacts the resulting surface morphology, with grit shape producing a greater effect than crystallographic orientation in the grain interior relative to the grain boundary. Subsurface damage depends on the grit shape and crystal structure. Differences in the critical depth of cut for ductile-to-brittle transition in scribing of mono-crystalline silicon are explained via analysis of the stress state produced by idealized grit shapes. K E Y W O R D Sabrasive shape, damage, diamond wire sawing, multi-crystalline silicon, scribing

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“…Three typical single-point diamond scratchings consist of instrumented nanoscratching [65], atomic force microscopy [66], and precision motion stage scratching [67]. However, the common characteristic of three scratchings is the speed at micrometer per second, which is 6 to 8 orders of magnitude lower than those of grinding.…”

Section: Understanding the Residual Stresses Formation Based On Singlmentioning

confidence: 99%

“…The residual stress and its distribution in the ground surface/ subsurface layer are generally influenced by the following Int J Adv Manuf Technol factors: grinding wheel characteristics (i.e., abrasive type and distribution, porosity), dressing techniques, grinding parameters, cooling conditions, and workpiece material properties [31,58,[61][62][63][64][65][66][67][68][69][70][71][72][73][74][75][76][77].…”

Section: Influential Factors On Grinding-induced Residual Stressesmentioning

confidence: 99%

Review on grinding-induced residual stresses in metallic materials

Ding

Zhang

et al. 2016

Int J Adv Manuf Technol

103

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This paper provides a state-of-the-art review on the investigations into the residual stresses in metallic structural materials generated by grinding. The materials covered include steels, titanium alloys, and nickel-based superalloys. The formation mechanisms of the residual stresses and their impacts are specifically discussed. Some major influential factors on the residual stresses formation in grinding, such as grinding wheel characteristics, dressing techniques, grinding parameters, cooling conditions, and properties of workpiece materials, are analyzed in detail. These include experimental measurement, modeling, simulation, knowledge-based monitoring, and fuzzy analysis. Finally, the paper highlights some important aspects of grinding-induced residual stresses for further investigation.

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Effects of carbide and nitride inclusions on diamond scribing of multicrystalline silicon for solar cells

Cited by 12 publications

References 14 publications

A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut

A novel approach of high speed scratching on silicon wafers at nanoscale depths of cut

Effect of grit shape and crystal structure on damage in diamond wire scribing of silicon

Review on grinding-induced residual stresses in metallic materials

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