Effects of Boundary Conditions on the Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor

Evans, Gregory H.; Greif, R.

doi:10.1080/10407788708913584

Cited by 59 publications

(31 citation statements)

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“…Dr. Yoshiro 7 studied the effect of the different operating pressure and mass-flow rate at inlet for the flow field in the Chemical Vapor Deposition (CVD) reactor. Dr. Evans 8 investigated the different boundary condition settings of the CVD reactor wall on the simulation model. Dr. Lin 9 had a thorough investigation on the influence of the flow field with different distance between inlet and susceptor in the CVD chamber.…”

Section: Introductionmentioning

confidence: 99%

The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique

Liao

Chen

2013

AIP Advances

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The thin film deposition property and the process difference during the wafer size migration from 12 (300 mm) to 18 (450 mm) in the Chemical Vapor Deposition (CVD) equipment is improved and reduced, respectively, when the chamber hardware is designed with the help of 3D full chamber modeling and 3D experimental visual technique developed in this work. The accuracy of 3D chamber simulation model is demonstrated with the experimental visual technique measurement. With the CVD chamber hardware design of placing the inlet position and optimizing the distance between the susceptor edge and the reactor wall, the better thin film deposition property and the larger process compatibility during the wafer size migration from 12 (300 mm) to 18 (450 mm) for the industry cost reduction can be achieved. Nondimensional Nusselt parameter is also found to be the effective indicator to monitor the thin film deposition property. C 2013 Author(s)

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Section: Introductionmentioning

confidence: 99%

The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique

Liao

Chen

2013

AIP Advances

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“…However, the present analysis is based on ideal stagnation flow, assuming infinite radial extent of the inlet and the stagnation surface. Fortunately, to a very good approximation, real reactors can be designed and operated in regimes that closely reproduce the ideal flow [40][41][42][43][44][45][46][47][48][49].…”

Section: Introductionmentioning

confidence: 99%

Unified Nusselt- and Sherwood-number correlations in axisymmetric finite-gap stagnation and rotating-disk flows

Coltrin

Kee

2016

International Journal of Heat and Mass Transfer

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a b s t r a c tThis paper develops a unified analysis of stagnation flow heat and mass transport, considering both semiinfinite domains and finite gaps, with and without rotation of the stagnation surface. An important objective is to derive Nusselt-and Sherwood-number correlations that represent heat and mass transport at the stagnation surface. The approach is based on computationally solving the governing conservation equations in similarity form as a boundary-value problem. The formulation considers ideal gases and incompressible fluids. The correlated results depend on fluid properties in terms of Prandtl, Schmidt, and Damköhler numbers. Heterogeneous chemistry at the stagnation surface is represented as a single first-order reaction. A composite Reynolds number represents the combination of stagnation flows with and without stagnation-surface rotation.Published by Elsevier Ltd.

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“…Previous studies by Evans and Greif [1]- [2], Patnaik et al [3], and Fotiadis et al [4] have examined these effects for a single component gas in nonisothermal RDR's. Palmateer et al [5] noted convective instabilities in an experimental study of isothermal gas mixing in a stagnation flow reactor.…”

Section: Introductionmentioning

confidence: 99%

Heat transfer and flow stability in a rotating disk/stagnation flow chemical vapor deposition reactor

Joh

Evans

1996

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Effects of Boundary Conditions on the Flow and Heat Transfer in a Rotating Disk Chemical Vapor Deposition Reactor

Cited by 59 publications

References 1 publication

The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique

The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D full chamber modeling and experimental visual technique

Unified Nusselt- and Sherwood-number correlations in axisymmetric finite-gap stagnation and rotating-disk flows

Heat transfer and flow stability in a rotating disk/stagnation flow chemical vapor deposition reactor

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