Effects of Bi Irradiation on the Molecular Beam Epitaxy Growth of GaSb on Ge (111) Vicinal Substrates

Abstract

The growth of GaSb on Ge (111) vicinal substrates is performed by molecular beam epitaxy with Bi irradiation previous to and during the growth. The effects of the Bi irradiation on the surface morphology and on the crystallinity are investigated using atomic force microscopy and X‐ray diffraction, respectively. It is shown that Bi works as a surfactant, which suppresses the generation of rotational twins in the GaSb layer.