2021
DOI: 10.1016/j.jallcom.2021.159648
|View full text |Cite
|
Sign up to set email alerts
|

Effects of Bi and S co-doping on the enhanced photoelectric performance of ZnO: Theoretical and experimental investigations

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
3
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 13 publications
(5 citation statements)
references
References 65 publications
1
3
0
Order By: Relevance
“…The calculated band structures of Zn 36 O 36 , Zn 36 RO 35 (R = S/Se/Te), Zn 36 RO 34 (R = S/Se/Te), Zn 36 RH i O 34 (R = S/Se/T), and Zn 35 RH i O 35 (R = S/Se/Te) systems are shown in figures 2(a)-(f ), where the Fermi level was always defined as the energy zero. Figure 2(a) shows that the forbidden band width of the pure Zn 36 O 36 model was E g = 3.40 eV, consistent with the experimentally measured value [10]. This finding showed the GGA + U method could be reasonably used to adjust the bandgap in the present paper.…”
Section: Band Structure Analysissupporting
confidence: 86%
See 2 more Smart Citations
“…The calculated band structures of Zn 36 O 36 , Zn 36 RO 35 (R = S/Se/Te), Zn 36 RO 34 (R = S/Se/Te), Zn 36 RH i O 34 (R = S/Se/T), and Zn 35 RH i O 35 (R = S/Se/Te) systems are shown in figures 2(a)-(f ), where the Fermi level was always defined as the energy zero. Figure 2(a) shows that the forbidden band width of the pure Zn 36 O 36 model was E g = 3.40 eV, consistent with the experimentally measured value [10]. This finding showed the GGA + U method could be reasonably used to adjust the bandgap in the present paper.…”
Section: Band Structure Analysissupporting
confidence: 86%
“…Due to the strong correlation between the Zn-3d electrons and O-2p electrons of ZnO [29], GGA could not accurately describe the interaction between electrons in this system, leading to an underestimation of the bandgap of ZnO. The calculated bandgap value was only 0.74 eV, lower than the experimental value (3.40 eV) [10]. Therefore, the GGA + U method [30] was used to correct the bandgap.…”
Section: Calculation Modelmentioning
confidence: 95%
See 1 more Smart Citation
“…As shown in figure 4, the PL intensity of pure MoS 2 was higher than that of Ni-MoS 2 , Se-MoS 2 , and Ni-Se-MoS 2 indicates the faster charge carrier transfer and the low recombination rates of doped and co-doped materials. The decrease in PL intensity of Ni-MoS 2 , Se-MoS 2 , and Ni-Se-MoS 2 , both co-doped and doped, indicates incorporation of new energy states in the electronic band energy [32] as predicted by Farooq et al in their work on the correlation between experimental and COMSOL simulation on Cd-doped MoS 2 nanomaterials [33].…”
Section: Electrochemical Characterizationsmentioning
confidence: 56%
“…Add 2.0 mol% of [Sm (NO 3 ) 3 .6H 2 O]or [La (NO 3 )3.6H 2 O], or [Sr (NO 3 )] as dopants (2:2) to the above mixture with magnetic stirring until dissolved, after adjusting the pH range (10-11) by using NaOH formed white precipitate followed by magnetic stirring at room temperature for 30 min. Finally, the yield was washed by using D.W. and dried at 80 C. 40,41…”
Section: Synthesis Methodsmentioning
confidence: 99%