Effects of barrier height distribution on the behavior of a Schottky diode

Chand, Subhash; Kumar, Jitendra

doi:10.1063/1.366370

Cited by 147 publications

(93 citation statements)

References 19 publications

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“…The barrier height can also be determined by rewriting equation (3) It is important to point out that the value of is not small compared to value for all the three samples, confirming the presence of the interface inhomogeneties [42]. These values are displayed in Table 2.…”

Section: (C)mentioning

confidence: 92%

“…In other words the increase of the value of n with decrease of temperature is direct result of the bias dependence of the mean barrier and the standard deviation of the Gaussian distribution of barrier heights in Schottky diodes. The Gaussian distribution of the barrier heights and variation of the ideality factor with temperature are expressed by the following equations [41,42]. It is important to point out that the value of is not small compared to value for all the three samples, confirming the presence of the interface inhomogeneties [42].…”

Section: Current-voltage Characteristicsmentioning

confidence: 99%

“…Sellai et al [39] pointed out that the barrier height found by extrapolation to n = 1 may be considered as a reasonable good estimate for the homogeneous barrier height. Thus, the barrier of SPAN/(311)B GaAs samples is more homogeneous, because value at n = 1 for both regions are higher than those of (100) GaAs and (311)A GaAs samples.The barrier height can also be determined by rewriting equation (3) It is important to point out that the value of is not small compared to value for all the three samples, confirming the presence of the interface inhomogeneties [42]. These values are displayed in Table 2.…”

mentioning

confidence: 92%

“…These values are displayed in Table 2. S. Chand and J. Kumar [42] argued that the decrease of the standard deviation leads to an increase in the barrier height and a decrease in the ideality factor. The standard deviation is a measure of the barrier homogeneity.…”

Section: Current-voltage Characteristicsmentioning

confidence: 99%

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Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Jameel

Aziz

Felix

et al. 2016

Applied Surface Science

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This article reports the effect of n-type GaAs substrate orientation, namely (100), IntroductionEssentially conducting polymers, such as polyaniline (PANI), sulfonated polyaniline (SPAN), poly(p-phenylene-vinylene), polypyrrole, polyacetylene, polythiophene, etc., are promising semiconductors materials with confirmed technological potential due to their unique optical and electrical properties [1]. Among the family of organic semiconductors, the semiconducting polymers have attracted the most attention for applications in electronic and optoelectronic devices, particularly due to their exceptional electrical properties and easy synthesis [2][3][4]. As a result, this category of polymers has been used in several applications such as organic light emitting diodes (OLEDs) [5,6], solar cells [7,8] As it is well known, the crystallographic orientation of the substrate has a significant effect on incorporation of impurities and defects and consequently on optical and electronic properties of III-V materials [28]. The ideality factor n and barrier height (BH) as well as the electrical characteristics are fundamental parameters of a Schottky barrier diode (SBD) and these give an indication about the quality of the Schottky interface. The SBD parameters must be determined over a broad range of temperatures because the analysis of the current-voltage (I-V) characteristics of the SBD measured only at room temperature does not provide accurate information about the conduction mechanism and the barrier nature created at metal semiconductor interface in order to understand these phenomena and determine precisely the parameters of the Schottky diodes. Chand et al. [29] and Hardikar et al.[30] analysed the experimental currentvoltage data which revealed that there is an increase in the ideality factor and a decrease in the zero-bias barrier height with decreasing temperature. Consequently, the ideality factor and the barrier height established from forward I-V characteristics are found to be temperature dependent. This confirms that the Schottky barrier height is inhomogeneous in nature at the interface. This behaviour has been successfully described on the basis of the thermionic emission mechanism with Gaussian distribution of the barrier heightTo fabricate a hybrid organic/inorganic semiconductor heterojunction device with the aim to obtain specific optical and electrical properties on the bases of their doping levels, a thin organic film is deposited onto the surface of a conventional inorganic semiconductor substrate. This can be done by simple and inexpensive methods such as 4 spin coating used for thin film deposition at room temperature. Recently, a new technique of SPAN films preparation has been developed by Yang et al. [32].In this paper, we report on the fabrication and electrical characterization of Au/SPAN/GaAs heterojunctions grown on three different substrate orientations, namely n-type GaAs (100), (311)A and (311)B. We have investigated the effect of the substrate orientation on the heterojunction parameters ...

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Section: (C)mentioning

confidence: 92%

Section: Current-voltage Characteristicsmentioning

confidence: 99%

mentioning

confidence: 92%

Section: Current-voltage Characteristicsmentioning

confidence: 99%

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Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Jameel

Aziz

Felix

et al. 2016

Applied Surface Science

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“…Therefore, the BH is likely to be a function of the interface atomic structure and the atomic inhomogeneities at MS interface, which are caused by grain boundaries, multiple phases, facets, defects, a mixture of different phases, etc. [19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Chawanda

Nel²,

Auret³

et al. 2010

J. Korean Phy. Soc.

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We computed the homogeneous Schottky barrier height (SBH) at ideality factor (n) = 1.0 of Ni/nGe (100) Schottky diodes (SDs). The SDs were identically prepared by using resistive evaporation of Ni on n-Ge (100). The SBHs and n of these diodes (24 dots) were calculated from their experimental forward bias current-voltage (I-V ) and reverse bias capacitance-voltage (C-V ) measurements at room temperature. Even though the Schottky diodes were identically prepared, the values of the SBH from the I-V characteristics varied from 0.487 to 0.508 eV, the ideality factor varied from 1.34 to 1.53, and the SBH from the C −2 -V characteristics varied from 0.358 to 0.418 eV. The Gaussian fits of the experimental SBH distributions obtained from the C −2 -V and the I-V characteristics yielded mean SBH values of 0.401 ± 0.015 and 0.503 ± 0.006 eV, respectively. Furthermore, a homogeneous SBH value of approximately 0.535 eV was also computed from an extrapolation of a linear plot of the experimental SBHs versus the ideality factors. The homogeneous SBHs, rather than the effective SBHs, of individual contacts or mean values should be used to discuss the theories and the physical mechanisms that determine the SBHs of SDs.

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Giant Photoresponse Enhancement in Mixed‐Dimensional Van der Waals Heterostructure through Dielectric Engineering

Gokul

Chowdhury

et al. 2022

Adv Materials Inter

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transition metal dichalcogenides (TMDs) have caught much interest due to their applications in various fields like optoelectronics, [1] sensors, [2] strain engineering, [3,4] valleytronics, [5] spintronics, [6] etc. 2D materials because of its reduced dimension experience reduced dielectric screening. [7,8] The electric field lines between an electron and hole in a single layer of a 2D material extend above and below the surface, with no material available to screen the field lines. [9] This results in a large exciton binding energy [7,8,[10][11][12][13] as well as increased quasiparticle band gap [14] and make the electrical and optical properties of the material susceptible to its dielectric environment. [15,16] A dielectric environment modifies the electron-hole interactions in 2D materials and helps in controlling the band gap of 2D materials [14,17] without disturbing the pristine quality of these materials. Previous theoretical and experimental studies have shown that a higher dielectric environment could reduce the fundamental band gap and exciton binding energy in 2D materials. [13,15,[18][19][20][21][22] The dielectric environment also plays a crucial role in determining the impurity scattering of charge carriers in 2D materials. [23][24][25] This effect is primarily responsible for the enhanced mobility of 2D materials in high dielectric medium. [23,24] Depending on the dielectric mismatch between the 2D semiconducting materials and the surrounding dielectric environment, the effective potential experienced by a mobile electron due to an ionized impurity at the surface of the membrane enhances or diminishes. [23] This effect also depends on the thickness of the semiconducting membrane. When the thickness increases above a critical limit, dielectric mismatch has no effect on Coulomb scattering. [23] All these effects show that controlling the dielectric environment of 2D materials is particularly interesting because of its profound impact on the electronic band gap, screening, exciton and trion binding energies, exciton transport, and mobility modulation, which can help toward the efficient design of various optoelectronic devices.Even though research on 2D TMDs is growing faster with the discovery of more exciting properties, its production and application have not yet started at an industrial scale. So, it isThe reduced dielectric screening in the out of plane direction, makes 2D materials sensitive to the surrounding environment, offering a unique platform with greatly tunable optoelectronic properties. Large exciton binding energy in 2D materials limits their photogeneration efficiency. The strong electric field generated at a p-n junction will help in separating these strongly bound electron hole pairs. Here, the present study demonstrates how engineering the surrounding dielectric environment would facilitate a mixed dimensional van der Waals p-n junction to improve the photoresponse to a great extent. A 3D silicon-2D monolayer MoS 2 heterostructure is fabricated as a model system. Nearly three ord...

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Effects of barrier height distribution on the behavior of a Schottky diode

Cited by 147 publications

References 19 publications

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations

Correlation Between Barrier Heights and Ideality Factors of Ni/n-Ge (100) Schottky Barrier Diodes

Giant Photoresponse Enhancement in Mixed‐Dimensional Van der Waals Heterostructure through Dielectric Engineering

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