Effects of argon thermal annealing on surface structure, microstructural and silicide formation of Silicon-Titanium-Cobalt thin film

Mtshali, C.; Khumalo, Z.M.; Mocumi, Gladness; Lebesana, Keletso; Kheswa, N. Y.; Magogodi, Steven; Cummings, Franscious; Pieters, Caswell; Nkosi, M.

doi:10.1016/j.nimb.2019.02.029

Cited by 5 publications

(1 citation statement)

References 15 publications

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“…Rutherford backscattering spectrometry (RBS) was employed to study elemental compositions, concentrations and thickness of green synthesized CuO nanocoatings. RBS is the most precise quantitative, and versatile technique of ion beam analysis for elemental surface analysis, and depth pro ling of thin lms without the need for standards (Adeoye et al 2015;Mtshali et al 2019). Figure 7(a-d) shows the RBS spectra of CuO nanocoatings deposited at RS 700, 800, 900, and 1000 rpm carried out using a beam of 3.6 MeV alpha particles respectively.…”

Section: Rutherford Backscattering Spectrometrymentioning

confidence: 99%

Green synthesis of single layered SS/CuO nanocoatings as solar selective absorber: Morphological, Structural and optical properties

Welegergs

Gebretinsae

Tsegay

et al. 2022

Preprint

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Herein, spectrally selective single-layered CuO nanocoatings were successfully demonstrated via green synthesis, and deposited on stainless steel (SS) substrates using spin-coater at 700, 800, 900 and 1000 rpm. The morphological surface, structural, and compositional analysis of the obtained nanocoatings were studied using SEM, XRD, EDX, and Raman spectroscopy. The SEM images shows a nanorod-like structure surfaces with a dense surface morphology. The XRD patterns confirm the presence of peaks indexed to a monoclinic structural phase of CuO. The EDX spectra clearly reveals the presence of Cu, and O elements and XPS spectra reveals peaks of Cu2p and O1s core levels which are typical characteristics of Cu (II) and O(II), respectively in CuO. Raman spectra shows peaks at 305, 344, and 642 cm− 1 attributed to Raman active (Ag+2Bg) modes for Cu-O stretching. Rutherford backscattering spectrometry (RBS) determines content of the elements, and changes in thicknesses of the coatings with rotational speed (RS) of the spin coater. The elemental content of Cu, and O atoms are respectively 54, and 46 at %, and the thicknesses are calculated to be 1.406×1018 atoms/cm2 (296.3 nm), 1.286×1018 atoms/cm2 (271.0 nm), 1.138×1018 atoms/cm2 (239.8 nm), and 0.985×1015 atoms/cm2 (207.5 nm) at 700, 800, 900 and 1000 rpm, respectively. The optical properties of CuO nanocoatings was characterized using UV-Vis-NIR, and FTIR spectrometers, and its vital solar selectivity parameters of solar absorptance (α), and emissivity(ε) were evaluated in the range of 0.3–2.5, and 2.5–20µm wavelengths, respectively, and exhibits the solar parameters (α = 0.91, and ε = 0.31) associated to 700 rpm due to an intrinsic and interference-induced absorption as well as higher attenuation of light.

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Section: Rutherford Backscattering Spectrometrymentioning

confidence: 99%

Green synthesis of single layered SS/CuO nanocoatings as solar selective absorber: Morphological, Structural and optical properties

Welegergs

Gebretinsae

Tsegay

et al. 2022

Preprint

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Spectrally selective single layered Ag@CuO nanocermet coatings for photothermal application: Green synthesis method

et al. 2023

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Excimer laser annealing suppresses the bubbles in the recrystallization of argon-implantation induced amorphous germanium

Wen

Zhu

et al. 2023

Journal of Applied Physics

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We have investigated the recrystallization behavior of the argon (Ar) bubble-rich amorphous germanium (a-Ge) by utilizing the excimer laser annealing (ELA) in comparison with the conventional furnace annealing (FA). We demonstrate that the ELA can efficiently suppress the Ar bubbles to have good recrystallization of a-Ge in sharp contrast to the conventional FA treatment where the bubble-rich a-Ge can only be getting partial recrystallization with many dislocations and stacking faults. Transmission electron microscopy results exhibit that ELA can transform the Ar implantation-induced damaged layer into a fully crystalline matrix containing no visible defects except isolated bubbles in a low density. We reveal the critical role of the Ar bubbles played in the recrystallization behavior of the a-Ge by comparing the two types of annealing methods. This finding provides a new routine to suppress the implantation-induced noble-gas bubbles in semiconductors to solve the issue of the high-quality regrowth of the noble–gas implanted layer.

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Effects of argon thermal annealing on surface structure, microstructural and silicide formation of Silicon-Titanium-Cobalt thin film

Cited by 5 publications

References 15 publications

Green synthesis of single layered SS/CuO nanocoatings as solar selective absorber: Morphological, Structural and optical properties

Green synthesis of single layered SS/CuO nanocoatings as solar selective absorber: Morphological, Structural and optical properties

Spectrally selective single layered Ag@CuO nanocermet coatings for photothermal application: Green synthesis method

Excimer laser annealing suppresses the bubbles in the recrystallization of argon-implantation induced amorphous germanium

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