Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry

Liu, Yao; He, Tian-Yu; Chen, Daihua; Yang, Hong; Ferguson, Ian T.; Huang, Dan; Feng, Zhe Chuan

doi:10.1016/j.jallcom.2020.156631

Cited by 12 publications

(4 citation statements)

References 48 publications

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“…[ 31,32 ] The larger E g value of TiO 2 thin film than E g value of bulk TiO 2 frequently is ascribed to strain values and crystal quality of thin films as that pointed out for ZnO thin film. [ 33–36 ] In addition, another crucial parameter that has an effect on the optical bandgap is the thickness, which can lead to occur quantum confinement effect and change of localized density of states in the thin film. [ 37,38 ] The obtained E g values in this study are consistent with the reported studies in the literature.…”

Section: Resultsmentioning

confidence: 99%

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Rüzgar

2020

Physica Status Solidi (a)

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TiO 2 has received intense attention for optoelectronic applications due to its excellent properties, such as non-toxicity, low cost, and simple preparation. Herein, the influence of Li doping both on the structural and optical characteristics of TiO 2 thin films and on optoelectronic properties of TiO 2-based photodiodes is investigated. The root-mean-square (RMS) roughness values obtained from the atomic force microscopy (AFM) results and the optical bandgap energies calculated from the Tauc method vary between 3.40 and 24.53 nm and between 3.58 and 3.75 eV depending on the increase in Li doping, respectively. The ideality factor (n) values of the diodes, which provided information about the performance of diodes, are calculated between 5.92 and 9.74. The lowest n value of 5.92 is obtained for 2% Li-doped diode. All the fabricated diodes demonstrate a good photodiode behavior, and the maximum photoresponsivity value of 6.74 Â 10 À2 A W À1 is obtained for 10% Li:TiO 2. In addition, the C-V, G-V, and R s-V characteristics of diodes are examined for different frequencies. Li doping has improved the optoelectrical performance of the TiO 2-based photodiodes. Thus, the Li:TiO 2-based photodiode can be a candidate for optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Rüzgar

2020

Physica Status Solidi (a)

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“…These materials are sensitive to external effects such as temperature, external fields, and pressure, in addition to the value of their physical characteristics which make them good candidates for sensors of several types [8]. Several experimental and theoretical works have been published on some of the properties of semiconductor alloys, but, no sufficient data is available for the acoustic velocity and phonon frequencies under pressure and temperature [8][9][10][11][12][13][14][15][16][17][18][19][20][21]. Insufficient methods have been developed to find out the semiconductor band structure, including the (EPM) [22][23][24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Acoustic velocity and phonon frequencies of Ga_xIn_1−xSb alloys under pressure, temperature, and compositions

Elkenany

2021

Phys. Scr.

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In the present work, we have reported the empirical pseudo-potential method (EPM) based on the virtual crystal approximation (VCA) incorporated the compositional disorder effect (CDE) to study some physical properties of GaxIn1−xSb alloys. The dependence of the acoustic velocity and phonon frequencies for the studied alloys with the Ga content has been analyzed. The phonon frequencies and the sound velocity under the effect of pressure and temperature have been determined. The obtained outcomes were generally in very good agreement with the accessible experimental and theoretical data. The acoustic velocity and phonon frequencies of GaxIn1−xSb under pressure and temperature have not been fully studied, so, we highlighted the study of this topic. The alloy under investigation could be useful in optoelectronic and photonic materials.

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“…25,26 Although there are many reports regarding the effects of annealing treatment on the properties of ZnO film grown by conventional thermal ALD and other film growth methods. [27][28][29][30] Virtually, its effects may be different for films grown by different techniques. So far, systematic investigation on the effects of annealing treatment on sALD-ZnO film is still in lack.…”

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confidence: 99%

Variation of Oxygen Vacancy Defects in sALD-ZnO Films Annealed in an Oxygen-Rich Ambient

Zhao

Sun

et al. 2021

ECS J. Solid State Sci. Technol.

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Oxygen vacancy defects play an important role in determining the properties of zinc oxide (ZnO) film. In this study, ZnO film prepared by a high-deposition-rate spatial ALD process was annealed in an oxygen-rich ambient. The variation of oxygen vacancy defects was analyzed. The results show that oxygen vacancy defects were suppressed by the annealing treatment, particularly at 500 °C–700 °C. As a result, the carrier concentration decreases with increasing annealing temperature, leading to the higher film resistivity. In addition, the oxygen atoms segregated to the ZnO/Si interface to form an interfacial oxide layer, leading to an oxygen-deficient ZnO film when annealed at 300 °C–400 °C and the decrease of oxygen atomic ratio when annealed at 500 °C–800 °C. The annealing treatment also induces higher crystallinity with larger crystallite size, leading to a higher mobility. The refractive index increases with annealing temperature at 300 °C–700 °C, possibly due to the structural relaxation, densification and crystallization of the film. However, the annealing treatment has little effect on the film transmittance due to the low optical loss.

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Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry

Cited by 12 publications

References 48 publications

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Acoustic velocity and phonon frequencies of Ga_xIn_1−xSb alloys under pressure, temperature, and compositions

Variation of Oxygen Vacancy Defects in sALD-ZnO Films Annealed in an Oxygen-Rich Ambient

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Effects of annealing temperature, thickness and substrates on optical properties of m-plane ZnO films studied by photoluminescence and temperature dependent ellipsometry

Cited by 12 publications

References 48 publications

The Optoelectrical Properties of Li: TiO2/p‐Si Photodiodes for Various Li Doping

The Optoelectrical Properties of Li: TiO2/p‐Si Photodiodes for Various Li Doping

Acoustic velocity and phonon frequencies of GaxIn1−xSb alloys under pressure, temperature, and compositions

Variation of Oxygen Vacancy Defects in sALD-ZnO Films Annealed in an Oxygen-Rich Ambient

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The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

The Optoelectrical Properties of Li: TiO₂/p‐Si Photodiodes for Various Li Doping

Acoustic velocity and phonon frequencies of Ga_xIn_1−xSb alloys under pressure, temperature, and compositions