Effects of annealing temperature of buffer layer on structural and optical properties of ZnO thin film grown by atomic layer deposition

Effects of rapid thermal annealing in different ambients on structural, electrical, and optical properties of ZnO thin films by sol-gel method

“…It has many applications in various optical and electrical devices such as gas sensors, surface acoustic wave devices, light emitting diodes, transparent electrode of solar cells, and thin film transistor [1][2][3].…”

Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method

“…As there is no lattice-matched substrate for In 0.82 Ga 0. 18 As material, the large lattice mismatch between In 0.82 Ga 0. 18 As and substrates will result in the misfit dislocations or defects that will destroy the material quality.…”

“…18 As material, the large lattice mismatch between In 0.82 Ga 0. 18 As and substrates will result in the misfit dislocations or defects that will destroy the material quality. Many schemes [8][9][10][11] have been adopted to solve this problem, in which twostep growth technique was an effective and convenient way [12].…”

“…However, the report on the effect of buffer layer annealing temperature on In 0.82 Ga 0. 18 As is rare. For low deposition temperature, there are possibilities that all the chemical reactions do not occur ideally, precursors do not decompose completely and atoms fail to move to equilibrium atomic sites.…”

Effects of annealing temperature and Al2O3 buffer layer on ZnO thin films grown by atomic layer deposition

“…At present, various deposition methods have been used to grow ZnO and its related compounds, such as chemical vapor deposition (CVD), molecular beam epitaxy (MBE), sputtering, pulse laser deposition (PLD), electron-beam evaporation, atomic layer deposition (ALD) and hydrothermal method [4][5][6][7][8][9][10]. ALD is an altered CVD growth method that based on self-limiting mechanism, in which precursors (gases or vapors) are alternately pulsed onto the substrate surface.…”