Effects of annealing on X-ray-amorphous CVD W-Si-N barrier layer materials

Triple Functions of Ni(OH)2 on the Surface of WN Nanowires Remarkably Promoting Electrocatalytic Activity in Full Water Splitting

“…While the peak of 400.0 eV is regarded as N atoms at tetrahedral interstitial sites of WN. 15,17,22 The peak of 530.8 eV in the O window (Figure 2d) is regarded as W−O−W, and the peak of 532.6 eV corresponds to O−C. 23,24 After the introduction of Ni(OH) 2 on WN, the existence of Ni(OH) 2 is confirmed by Ni 2p 3/2 (855.6 eV) and Ni 2p 1/2 (873.1 eV), which have been regarded as Ni 2+ in Ni(OH) 2 (Figure 2c).…”

“…The peak of 397.6 eV is associated with the N–W bond. While the peak of 400.0 eV is regarded as N atoms at tetrahedral interstitial sites of WN. ,, The peak of 530.8 eV in the O window (Figure d) is regarded as W–O–W, and the peak of 532.6 eV corresponds to O–C. , …”

Diffusion barrier performances of direct current sputter-deposited Mo and MoxN films between Cu and Si

“…In recent years, the research of barrier materials focused on the refractory metal and its nitrides, especially for copper metallization, since nitrogen does not react with copper [7]. Nitrogen is beneficial for the formation the amorphous metallic alloys in which grain boundaries do not exist to provide fast diffusion pathways, as is the case in polycrystalline films.…”

Kinetic and Mechanistic Studies of the Chemical Vapor Deposition of Tungsten Nitride from Bis(Tertbutylimido)Bis(Tertbutylamido)Tungsten

“…Its proposed applications include use as a top electrode for capacitors in advanced dynamic random access memories, as a Schottky contact to GaAs, − and as an adhesive layer for blanket tungsten deposition . The predominant use of W x N in technology, though, is as a diffusion barrier material for ULSI devices. − For such applications, it is desirable to have materials with low resistivities and microstructures that prevent the interdiffusion of other layers in the device. Furthermore, the barrier layer material must be thermally stable in order to withstand the deposition and processing temperatures necessary for device fabrication. ,, Metal nitrides are particularly attractive toward this end because they tend to be chemically stable, can be highly conductive, and exhibit high hardness and melting points. − …”

“…Tungsten nitride is a suitable replacement for TiN as a ULSI barrier layer material, − one that can be deposited readily by both thermal and plasma-enhanced chemical vapor deposition processes. Its growth by these means generally favors a (111) orientation and dense columnar texture .…”