Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

Abstract

We have reviewed the deposition of titanium nitride (TiN) thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700 ∘ C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD), atomic force microscope (AFM), field emission scanning electron microscopy (FESEM), and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700 ∘ C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.

Post-deposition annealing of magnetron sputtered InAlN film at different temperatures

“…This demonstrates that with increase of the annealing temperature, thermal energy significantly reduces the defects and thus enhances the mobility of the ad-atoms. The increase in the ad-atoms mobility forces them to migrate towards favorable sites in the crystal lattice which results in the formation of the grain boundaries [40]. Coalescence of small grains through grain boundary diffusion results in the grains growth.…”

“…The thermal energy facilitates the ad-atoms diffusion and these atoms gain activation energy to occupy in the suitable places in the crystal structure [40][41][42]. This improves the surface smoothness and thus causes a decrease in the surface roughness of the film.…”

Optical, electrical and mechanical properties of TiN thin film obtained from a TiO2 sol-gel coating and rapid thermal nitridation

“…Indeed, TiN has intrinsic physico-chemical and optical properties making it first-choice material: low resistivity, high reflectance in the infrared spectral range, good corrosion resistance, good chemical inertness, good thermal stability, and high hardness [4][5][6]. Generally, TiN thin layer is obtained using a wide range of deposition processes requiring vacuum technology, such as reactive magneton sputtering [1,[7][8][9][10], molecular-beam epitaxy [11,12], chemical vapor deposition (CVD) [13][14][15], atomic layer deposition (ALD) [16][17][18][19] or pulsed laser deposition (PLD) [20][21][22], under a nitrogen or ammonia atmosphere. Unfortunately, due to its good hardness and chemical resistance, TiN is not adapted for being micro or nanostructured using standard etching process (Reactive Ion Etching for example).…”

Micro–Nanostructured TiN Thin Film: Synthesis from a Photo-Patternable TiO2 Sol–Gel Coating and Rapid Thermal Nitridation

“…New plasmonic materials are thus needed for stronger field confinement and high-temperature applications beyond the capabilities of noble metals . Among such materials, titanium nitride (TiN) is one of the most promising compounds investigated to date. , TiN can be obtained using a wide range of physical vapor deposition (PVD) and chemical vapor deposition (CVD) processes requiring vacuum technology, such as reactive magnetron sputtering, ,− molecular-beam epitaxy, , chemical vapor deposition (CVD), − atomic layer deposition (ALD), − or pulsed laser deposition (PLD) − under a nitrogen or ammonia atmosphere. Unfortunately, due to its intrinsic properties, notably hardness and chemical resistance, TiN cannot easily form micro- and nanostructures.…”