Effects of annealing on elemental composition and quality of CZTSSe thin films obtained by spray pyrolysis

Dermenji, L.; Curmei, N.; Guc, Maxim; Gurieva, Galina; Rusu, M.; Федоров, В. А.; Bruc, L.; Sherban, D.; Schorr, Susan; Симашкевич, А. В.; Arushanov, E.

doi:10.3103/s1068375516060041

Cited by 5 publications

(4 citation statements)

References 22 publications

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“…The relatively small grain size appearing in the surface of films can be due to the lack of annealing treatment of the samples at higher temperatures than 350 °C. Many authors have reported an improvement of the crystallinity with the thermal treatment in spray deposited CZTS films [36][37][38]. The XRD patterns of Cu 2 (Zn 1-x Mn x )SnS 4 films synthesized with various mole ratios x = 0; 0.2; 0.4; 0.6; 0.8 and 1 are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

INFLUENCE OF Mn ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2(Zn1-xMnx)SnS4 THIN FILMS DEPOSITED BY SPRAY PYROLYSIS

Cherif¹,

MEFTAH²,

ATTAF³

et al. 2020

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Cu2Zn1-xMnxSnS4 thin films were deposited onto glass substrates by spray pyrolysis method. They were characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and UV-Visible spectroscopy and the four point probe techniques in order to study the effect of Mn on structural, optical and electrical properties of the samples. Definite x variable like ratio [Mn]/([Zn] + [Mn]) has been taken equal to 0, 0.2, 0.4, 0.6, 0.8 and 1. XRD and EDS analysis revealed the substitution of Mn in Zn sites. Cu2MnSn3S8 compound has appeared as a secondary phase in the films deposited with x ≥ 0.6. Optical band gap of the films increased from 1.34 to 1.68 eV with the increasing x value in the films deposited with (0.4 ≤ x ≤ 1). The resistivity decreases from 1.89 to 0.36 × 10-2 Ω.cm as a result of Sn amount in the film.

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Section: Resultsmentioning

confidence: 99%

INFLUENCE OF Mn ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2(Zn1-xMnx)SnS4 THIN FILMS DEPOSITED BY SPRAY PYROLYSIS

Cherif¹,

MEFTAH²,

ATTAF³

et al. 2020

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“…The synthesis of kesterites-based absorber layers in an ambient environment using this technique was first reported by Nakayama in 1997 [121]. Following this work, different reports on the spray pyrolysis technique have been published, where the precursor type, substrate temperature, post thermal treatments and solution pH have been investigated [122][123][124][125]. The substrate temperature in particular, is a key process parameter, as it can influence both the morphology and the stoichiometry of the final film [126].…”

Section: Spray Coatingmentioning

confidence: 99%

Solution-based synthesis of kesterite thin film semiconductors

Todorov¹,

Hillhouse

Aazou

et al. 2020

J. Phys. Energy

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Large-scale deployment of photovoltaic modules is required to power our renewable energy future. Kesterite, Cu 2 ZnSn(S, Se) 4 , is a p-type semiconductor absorber layer with a tunable bandgap consisting of earth abundant elements, and is seen as a potential 'drop-in' replacement to Cu(In,Ga)Se 2 in thin film solar cells. Currently, the record light-to-electrical power conversion efficiency (PCE) of kesterite-based devices is 12.6%, for which the absorber layer has been solutionprocessed. This efficiency must be increased if kesterite technology is to help power the future. Therefore two questions arise: what is the best way to synthesize the film? And how to improve the device efficiency? Here, we focus on the first question from a solution-based synthesis perspective. The main strategy is to mix all the elements together initially and coat them on a surface, followed by annealing in a reactive chalcogen atmosphere to react, grow grains and sinter the film. The main difference between the methods presented here is how easily the solvent, ligands, and anions are removed. Impurities impair the ability to achieve high performance (>∼10% PCE) in kesterite devices. Hydrazine routes offer the least impurities, but have environmental and safety concerns associated with hydrazine. Aprotic and protic based molecular inks are environmentally friendlier and less toxic, but they require the removal of organic and halogen species associated with the solvent and precursors, which is challenging but possible. Nanoparticle routes consisting of kesterite (or binary chalcogenides) particles require the removal of stabilizing ligands from their surfaces. Electrodeposited layers contain few impurities but are sometimes difficult to make compositionally uniform over large areas, and for metal deposited layers, they have to go through several solid-state reaction steps to form kesterite. Hence, each method has distinct advantages and disadvantages. We review the stateof-the art of each and provide perspective on the different strategies.

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“…The S1 precursor was prepared in the similar way to that used for the Cu2ZnSnS4 preparation [27]. To the 17 ml of H2O 2.3 mg of Thiourea (CS(NH2)2) were added.…”

Section: Thin Film Preparationmentioning

confidence: 99%

“…The latter was used for the subsequent deposition of CdS to obtain the p-n junction. To increase the crystalline quality of the films annealing process in an S + Se atmosphere at 525 C for 30 min was performed in accordance with the parameters described for the Ag free system [27]. Note that, similar post-deposition annealing conditions were applied in Refs.…”

Section: Thin Film Preparationmentioning

confidence: 99%

Thin films of (AgxCu1−x)2ZnSn(S,Se)4 (x = 0.05–0.20) prepared by spray pyrolysis

et al. 2019

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Effects of annealing on elemental composition and quality of CZTSSe thin films obtained by spray pyrolysis

Cited by 5 publications

References 22 publications

INFLUENCE OF Mn ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2(Zn1-xMnx)SnS4 THIN FILMS DEPOSITED BY SPRAY PYROLYSIS

INFLUENCE OF Mn ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2(Zn1-xMnx)SnS4 THIN FILMS DEPOSITED BY SPRAY PYROLYSIS

Solution-based synthesis of kesterite thin film semiconductors

Thin films of (AgxCu1−x)2ZnSn(S,Se)4 (x = 0.05–0.20) prepared by spray pyrolysis

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Effects of annealing on elemental composition and quality of CZTSSe thin films obtained by spray pyrolysis

Cited by 5 publications

References 22 publications

INFLUENCE OF Mn ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2(Zn1-xMnx)SnS4 THIN FILMS DEPOSITED BY SPRAY PYROLYSIS

INFLUENCE OF Mn ON STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF Cu2(Zn1-xMnx)SnS4 THIN FILMS DEPOSITED BY SPRAY PYROLYSIS

Solution-based synthesis of kesterite thin film semiconductors

Thin films of (AgxCu1−x)2ZnSn(S,Se)4 (x = 0.05–0.20) prepared by spray pyrolysis

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Thin films of (AgxCu1−x)2ZnSn(S,Se)4 (x = 0.05–0.20) prepared by spray pyrolysis