Effects of annealing conditions on the electrical properties of Bi4-xNdxTi3O12 (x = 0.46) thin films processed at low temperature

Electrical Characteristics of Bismuth Titanate Ceramics and Glass-Ceramics, Containing SiO₂ and Nd₂O₃ as Additives

“…Introduction of Nd 2 O 3 in the this system leads to formation of tree types solid-solutions with the following solubility limits: Bi (1,6-1,08x) Nd x Ti 2 O (6,4+0,3x) , (0,25<x<0,96), Nd 2-x Bi x Ti 2 O 7 , (0<x<0,35), and Bi 4x Nd x Ti 3 O 12 , (0<x<2,6) [10]. The phase Bi 4 Ti 3 O 12 is characterized by more effective electrical and feroelectrical properties [11][12][13][14][15][16][17][18][19][20][21][22][23]. Introduction of SiO 2 in the Bi 2 O 3 -TiO 2 system (with amount below 40 mol% SiO 2 ) does hot change essentially the phase formation, but improves the glass formation ability and technological parameters for the preparation of textured ceramics and glass-ceramics.…”

Dielectric properties of bismuth titanate ceramics containing SiO2 and Nd2O3 as additives

“…It is well known, that the phase formation and the properties of Bi 4 Ti 3 O 12 ceramics are strongly influenced not only by the method of preparation, but also by the type and portion of additives. The introduction of Nd 2 O 3 as an additive allows the synthesis of materials with improved dielectric and ferroelectric properties, such as high dielectric constant, low dielectric losses, high remnant polarisation and high resistance to fatigue [7][8][9][10][11][12][13][14][15][16][17][18]. The other advantage of Nd 2 O 3 addition is the existence of solid solutions in the system Bi 2 O 3 -TiO 2 -Nd 2 O 3 .…”