Effects of an undoped-InGaN waveguide on the optical confinement and carrier dynamics of InGaN laser diodes

Paliwal, Avinash; Singh, Kuldip; Mathew, Manish

doi:10.1088/1555-6611/aae058

Cited by 11 publications

(6 citation statements)

References 27 publications

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“…Although, the random structures are easy to fabricate and design with minimum infrastructure requirement, they are complex to reproduce and rescale for the industry required bulk production, it is better to look for the periodic structures for designing LMS. Periodic nanophotonic structures (PNS) having subwavelength dimensions have been utilized and demonstrated their effectiveness successfully for a variety of optoelectronic applications [27][28][29][30][31]. PNS have a lot to offer for the design of optoelectronic devices as they have various unique advantages especially for the OSEH applications.…”

Section: Periodic Nanophotonic Structures For Light Trappingmentioning

confidence: 99%

Periodic Nanophotonic Structures-Based Light Management for Solar Energy Harvesting

Gupta¹

2021

Optoelectronics

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Solar energy has always been an obvious choice for solving the energy issues for the humans for centuries. The two most popular choices, out of many, to harness this infinite source of energy are: solar cells and photoelectrochemical cells. Although both these techniques are quite attractive, they have inherent limitations for tapping all of the incident photons. Maximizing the absorption of incident photons to produce maximum possible electrical output is always the main impetus for the researchers working to streamline these two techniques and making them compatible with existing sources of electrical energy. It has been well established that the light trapping in the solar cells and photoelectrochemical cells can play a vital role in improving their performance. To design light harvesting structures for both these applications, periodic nanophotonic structures have demonstrated stupendous results and shown that they have the real potential to enhance their performance. The chapter, in this regard, presents and reviews the current and historical aspects of the light harvesting structures for these two interesting applications and also discusses about the future of the research to further the performance of these large-area solar-to-electrical conversion transducers.

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Section: Periodic Nanophotonic Structures For Light Trappingmentioning

confidence: 99%

Periodic Nanophotonic Structures-Based Light Management for Solar Energy Harvesting

Gupta¹

2021

Optoelectronics

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“…Further, the optical modal field confinement factors in the active region of LD are calculated for each mode. The ordinary and extraordinary refractive index components of material layers are calculated with the frequencydependent parametric approximation [28][29][30]. The Si and Mg have the ionization energies of 13 meV and 170 meV, respectively in GaN.…”

Section: Device Modelling and Simulationmentioning

confidence: 99%

Effects of AlInN graded polarization-dependent doped top cladding on the performance of deep ultra-violet laser diode emitting at ∼271 nm wavelength

Paliwal

Singh

Mathew

2020

Semicond. Sci. Technol.

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This work presents the theoretical study on the polarization induced p-type doping of undoped-AlInN graded cladding layers for the deep ultra-violet laser diode (LD) emitting at around 271 nm wavelength. The reference LD consists of 320 nm of linearly graded undoped AlN-Al0.7Ga0.3N layer, while in our LD the graded undoped AlN-Al0.7Ga0.3N layer is replaced by the undoped AlN-Al x In(1−x)N composition graded layers with different x mole fraction from 0.88 to 0.92. The static device resistance for reference LD is ∼28.6 Ω which is reduced to ∼18.38 Ω for AlN-Al0.12In0.88N graded layer at 500 mA. The device resistance has been reduced dramatically by ∼10.2 Ω. The reduction in resistance is attributed to the increased polarization grading in AlN-Al0.12In0.88N. The large polarization grading leads to large hole carrier induction in the layer which increases the p-type conductivity of the undoped AlN-Al0.12In0.88N graded layer. Threshold current for reference LD is 393 mA which has been reduced to 384 mA for AlN-Al0.12In0.88N. The electron leakage has reduced from 0.9 kA cm−2 to 0.11 kA cm−2 at ∼30 kA cm−2 injected current density, whereas the hole transportation has improved from 29.23 kA cm−2 to ∼30 kA cm−2 at ∼30 kA cm−2 injected current density.

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“…Xia et al have reported that the choice of Al content in the EBL is critical in optimizing the performance of the LEDs [14]. Band bending of the EBL layer also impedes the flow of hole carriers to the active region [15].…”

Section: Effects Of Electron Blocking Layer Configuration On the Dyna...mentioning

confidence: 99%

“…Lowering the In content in the waveguide and barrier region lowers the optical field confinement in the active region. The material gain increases with the reduced In content in the waveguide and barrier region but the total modal gain reduces, thus the total output power is lower as compared to the InGaN waveguide LD [25]. The optimum In content in the waveguide and barrier region is necessary, providing sufficient material gain along with the enhanced optical field confinement in the waveguide region to improve the modal gain of the LD.…”

Section: Effect Of In Content In Waveguidementioning

confidence: 99%

Effects of electron blocking layer configuration on the dynamics of laser diodes emitting at 450 nm

2019

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In this paper, a theoretical study is presented, analysing the Al x Ga (1−x) N electron blocking layer (EBL) at different Al content and Mg-doping levels for the InGaN-based laser diode (LD) emitting at 450 nm. It is observed that the performance of LDs not only depends on the Al content in the EBL but also on the Mg doping levels in the EBL and the In content in the InGaN waveguide. The optimum selection of AlGaN EBL strongly depends upon the In content in the InGaN waveguide. It is found that, for an In 0.08 Ga 0.92 N waveguide, the higher Al content in the EBL degrades the performance due to the increase in leakage current, thus an Al-free EBL i.e. a GaN EBL, is optimal for an In 0.08 Ga 0.92 N waveguide. However, the increased Mg doping in the p-GaN (Al = 0) EBL shows improvement in the performance of LDs. For the p-GaN EBL with a Mg-doping level of 1 × 10 19 cm −3 , the output power is 138 mW, for 3 × 10 19 cm −3 doping it is 364 mW and for 5 × 10 19 cm −3 doping it increased to 556 mW. For the p-GaN EBL, the threshold current at 1 × 10 19 cm −3 is 319 mA, at 3 × 10 19 cm −3 doping it falls to 231 mA and for 5 × 10 19 cm −3 doping it is 227 mA. For the heavily doped p-GaN EBL, the threshold current dependency is negligible at higher Al content in the EBL, but power output shows a strong dependency on the Al content. In the case of an In-free waveguide i.e. a GaN waveguide (In = 0), the performance of the LD is optimal at 15% Al content in the EBL.

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Effects of an undoped-InGaN waveguide on the optical confinement and carrier dynamics of InGaN laser diodes

Cited by 11 publications

References 27 publications

Periodic Nanophotonic Structures-Based Light Management for Solar Energy Harvesting

Periodic Nanophotonic Structures-Based Light Management for Solar Energy Harvesting

Effects of AlInN graded polarization-dependent doped top cladding on the performance of deep ultra-violet laser diode emitting at ∼271 nm wavelength

Effects of electron blocking layer configuration on the dynamics of laser diodes emitting at 450 nm

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