2000
DOI: 10.1002/1521-3951(200007)220:1<187::aid-pssb187>3.0.co;2-d
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Effects of an Electric Field on the Binding Energy of a Donor Impurity in a Spherical GaAs-(Ga,Al)As Quantum Dot with Parabolic Confinement

Abstract: The binding energy of a donor impurity in a spherical GaAs–(Ga,Al)As quantum dot with parabolic confinement is calculated as a function of the radius of the quantum dot and as a function of the intensity of an applied electric field. Calculations are performed within the effective‐mass approximation and using a variational method. We have found that when the radius of the quantum dot is reduced, both the energy of the ground state in the well of GaAs and the binding energy of the impurity increase. Likewise, w… Show more

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Cited by 60 publications
(19 citation statements)
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“…In the variational calculation, the trial wave function for the ground state with the impurity present is taken [8] as the product between the eigenfunction of the Hamiltonian in eq. (1) without the Coulomb interaction (third term at the right) and the hydrogenic part, i.e.…”
Section: Theoretical Frameworkmentioning
confidence: 99%
See 1 more Smart Citation
“…In the variational calculation, the trial wave function for the ground state with the impurity present is taken [8] as the product between the eigenfunction of the Hamiltonian in eq. (1) without the Coulomb interaction (third term at the right) and the hydrogenic part, i.e.…”
Section: Theoretical Frameworkmentioning
confidence: 99%
“…The evidence of a parabolic potential well in quantum wires and dots was reported in the literature [4,5], and a parabolic potential is often considered to be a good representation of the "barrier" potential in semiconductor quantum dots [6][7][8]. The theoretical description of the behavior of a hydrogenic on-center donor in a spherical dot for rectangular and parabolic potentials will lead to a better understanding of the properties of a spherical quantum dot, and it is the subject of this paper.…”
Section: Introductionmentioning
confidence: 99%
“…External perturbations, such as application of electric field, have been found to provide valuable information about confined impurities [29][30][31][32][33][34][35][36][37][38][39][40][41]. The interplay between impurity and the applied field modulates the optical properties and has drawn attention in view of fundamental physics and device applications.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, the electric field hampers the spatial symmetry of the system to various extents and promotes emergence of nonlinear optical properties. Thus, the applied electric field deems special importance in the field of research on the optical properties of doped QDs [32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48].…”
Section: Introductionmentioning
confidence: 99%