Effects of an adsorbed water layer and self-assembled organosilane monolayers on scanning probe microscopy of silicon pn structures

Nakagiri, Nobuyuki; Sugimura, Hiroyuki; Ishida, Yuzuru; Hayashi, Kazuyuki; Takai, Osamu

doi:10.1016/s0039-6028(03)00456-4

Cited by 14 publications

(12 citation statements)

References 10 publications

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“…A silicon substrate patterned with n- and p-type impurities was used as a semiconductor sample [ 22 , 27 – 28 ]. Figure 5 shows the dopant pattern of the silicon substrate used in the measurements and the impurity concentrations.…”

Section: Methodsmentioning

confidence: 99%

“…The average distance between the tip and the sample is z to , and the amplitude and frequency of the vibrating cantilever are A and f 0 , respectively. The time-varying tip-sample distance is given by (27) From this equation and the relationship C g = ε 0 /z, we obtain the following expression: (28) Because of frequency mixing between the electrostatic force due to the AC bias voltage cos 2πf m t and the cantilever vibration cos 2πf 0 t, f 0 ± f m components of the electrostatic force…”

Section: Low Kpfsmentioning

confidence: 99%

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High–low Kelvin probe force spectroscopy for measuring the interface state density

Izumi¹,

Miyazaki²,

Li³

et al. 2023

Beilstein J. Nanotechnol.

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The recently proposed high–low Kelvin probe force microscopy (KPFM) enables evaluation of the effects of semiconductor interface states with high spatial resolution using high and low AC bias frequencies compared with the cutoff frequency of the carrier transfer between the interface and bulk states. Information on the energy spectrum of the interface state density is important for actual semiconductor device evaluation, and there is a need to develop a method for obtaining such physical quantities. Here, we propose high–low Kelvin probe force spectroscopy (high–low KPFS), an electrostatic force spectroscopy method using high- and low-frequency AC bias voltages to measure the interface state density inside semiconductors. We derive an analytical expression for the electrostatic forces between a tip and a semiconductor sample in the accumulation, depletion, and inversion regions, taking into account the charge transfer between the bulk and interface states in semiconductors. We show that the analysis of electrostatic forces in the depletion region at high- and low-frequency AC bias voltages provides information about the interface state density in the semiconductor bandgap. As a preliminary experiment, high-low KPFS measurements were performed on ion-implanted silicon surfaces to confirm the dependence of the electrostatic force on the frequency of the AC bias voltage and obtain the interface state density.

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Section: Methodsmentioning

confidence: 99%

Section: Low Kpfsmentioning

confidence: 99%

High–low Kelvin probe force spectroscopy for measuring the interface state density

Izumi¹,

Miyazaki²,

Li³

et al. 2023

Beilstein J. Nanotechnol.

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“…The WF of an ITO substrate can be modified by chemically functionalizing its surface with chlorosilanes, 70 acids or organic molecules, 71 or by physisorbing a doped polymer layer onto its surface. 72 The very high sensitivity of KPFM to the surface chemistry made it possible to map numerous processes such as the variation of the WF of a silicon substrate upon adsorption of a water layer from the humidity present in the air, 73,74 the corrosion phenomena in Al-based alloys on the microscopic scale, 75 and the in-situ operation of a chemical sensor of pyridine vapor. 76 One key aspect that has to be taken into account when measuring the SP of ultra thin films by KPFM is the effective contribution of the substrate.…”

Section: Measuring the Work Function On Nanometric Scalesmentioning

confidence: 99%

Exploring nanoscale electrical and electronic properties of organic and polymeric functional materials by atomic force microscopy based approaches

et al. 2007

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Beyond imaging, atomic force microscopy (AFM) based methodologies enable the quantitative investigation of a variety of physico-chemical properties of (multicomponent) materials with a spatial resolution of a few nanometers. This Feature Article is focused on two AFM modes, i.e. conducting and Kelvin probe force microscopies, which allow the study of electrical and electronic properties of organic thin films, respectively. These nanotools provide a wealth of information on (dynamic) characteristics of tailor-made functional architectures, opening pathways towards their technological application in electronics, catalysis and medicine.

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“…On substitution of the hydrogen atoms of the alkanethiol by fluorine the induced charge asymmetry can be obtained by measuring E surf [301]. This difference between E surf values can be used for imaging of mixed [302] or micropatterned [303,304] SAMs. Figure 13 shows KFM images of an noctadecyltrimethoxysilane (ODS) and heptadecafluoro-1,1,2,2-tetrahydrodecyl-1-trimethoxysilane (FAS) patterned silicon substrate, and of an ODS/AHAPS (n-(6-aminohexyl) aminopropyltrimethoxysilane) SAM.…”

Section: Self Assembled Monolayersmentioning

confidence: 99%

Multidimensional electrochemical imaging in materials science

2007

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In the past 20 years the characterization of electroactive surfaces and electrode reactions by scanning probe techniques has advanced significantly, benefiting from instrumental and methodological developments in the field. Electrochemical and electrical analysis instruments are attractive tools for identifying regions of different electrochemical properties and chemical reactivity and contribute to the advancement of molecular electronics. Besides their function as a surface analytical device, they have proved to be unique tools for local synthesis of polymers, metal depots, clusters, etc. This review will focus primarily on progress made by use of scanning electrochemical microscopy (SECM), conductive AFM (C-AFM), electrochemical scanning tunneling microscopy (EC-STM), and surface potential measurements, for example Kelvin probe force microscopy (KFM), for multidimensional imaging of potential-dependent processes on metals and electrified surfaces modified with polymers and self assembled monolayers.

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Effects of an adsorbed water layer and self-assembled organosilane monolayers on scanning probe microscopy of silicon pn structures

Cited by 14 publications

References 10 publications

High–low Kelvin probe force spectroscopy for measuring the interface state density

High–low Kelvin probe force spectroscopy for measuring the interface state density

Exploring nanoscale electrical and electronic properties of organic and polymeric functional materials by atomic force microscopy based approaches

Multidimensional electrochemical imaging in materials science

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