Effects of amorphous Co W and Ni W barrier layers on the evolution of Sn/Cu interface

Chen, Shuhui; Tan, Linlin; Yang, Chenlin; Chen, Peixin; Hu, Anmin; Ling, Huiqin; Li, Ming; Hang, Tao

doi:10.1016/j.matchar.2021.111448

Cited by 19 publications

(1 citation statement)

References 35 publications

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“…[ 10 ] At the same time, intermetallic compounds can also be improved to increase the reliability of solder joints. Chen et al [ 11 ] investigated the diffusion barrier properties of Sn‐Cu joints by electrodepositing Ni, Co, amorphous Ni–W, and amorphous Co–W on a Cu substrate and found that the amorphous Co–W has the best diffusion barrier properties. Liu et al [ 12 ] found that Co–W alloys have good diffusion barrier performance and explored the possibility of replacing the commonly used Ni barrier layer in electronic packaging.…”

Section: Introductionmentioning

confidence: 99%

Effect of Different Concentrations of Co Doping on the Properties of η′‐Cu₆Sn₅ and Ni₃Sn₄: First‐Principles Study

Wang,

Huang,

Guo

et al. 2024

Physica Status Solidi (b)

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In the field of electronic packaging, Ni3Sn4‐based and η′‐Cu6Sn5‐based compounds are common Sn‐based intermetallic compounds into which doping of other appropriate elements has been widely studied. Herein, the structural stability, mechanical properties, and electronic structures of (Ni,Co)3Sn4 and η′‐(Cu,Co)6Sn5 are systematically investigated using first‐principles calculations. By comparing the heat of formation of the doped and undoped intermetallic compounds, it is found that the doped Ni3Sn4 structure has a higher heat of formation and a less stable structure, while the doped η′‐Cu6Sn5 structure has a lower heat of formation and a more stable structure. The doped Ni3Sn4 exhibits an increasing bulk modulus (B) and Young's modulus (E), and the doped η′‐Cu6Sn5 exhibits a gradually increasing bulk modulus (B). These findings suggest that doping improves the rigidity and elastic deformation properties of the two intermetallic compounds. And yet the anisotropy of both intermetallic compounds is decreasing as doping concentration increases. According to the calculations of the electronic structures, the doped (Ni,Co)3Sn4 structure and the doped η′‐(Cu,Co)6Sn5 structure exhibit stronger metallicity. In addition, stronger Co–Sn ionic bonds are formed in the doped Ni3Sn4 and η′‐Cu6Sn5 structures. This suggests that the doped Ni3Sn4 and η′‐Cu6Sn5 structures are harder.

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Section: Introductionmentioning

confidence: 99%

Effect of Different Concentrations of Co Doping on the Properties of η′‐Cu₆Sn₅ and Ni₃Sn₄: First‐Principles Study

Wang,

Huang,

Guo

et al. 2024

Physica Status Solidi (b)

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Insights into the atomic scale structure, bond characteristics and electrical property of Cu/CuGa2 (001) interface: an experimental and first-principles investigation

Guo,

Wang,

Wang

et al. 2023

J Mater Sci: Mater Electron

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Thermal stability and diffusion barrier performance of amorphous Ni-P layer at Sn/Ni-P/Cu interface

Yao,

Shang,

Chen

et al. 2024

J Mater Sci: Mater Electron

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Effects of amorphous Co W and Ni W barrier layers on the evolution of Sn/Cu interface

Cited by 19 publications

References 35 publications

Effect of Different Concentrations of Co Doping on the Properties of η′‐Cu₆Sn₅ and Ni₃Sn₄: First‐Principles Study

Effect of Different Concentrations of Co Doping on the Properties of η′‐Cu₆Sn₅ and Ni₃Sn₄: First‐Principles Study

Insights into the atomic scale structure, bond characteristics and electrical property of Cu/CuGa2 (001) interface: an experimental and first-principles investigation

Thermal stability and diffusion barrier performance of amorphous Ni-P layer at Sn/Ni-P/Cu interface

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Effects of amorphous Co W and Ni W barrier layers on the evolution of Sn/Cu interface

Cited by 19 publications

References 35 publications

Effect of Different Concentrations of Co Doping on the Properties of η′‐Cu6Sn5 and Ni3Sn4: First‐Principles Study

Effect of Different Concentrations of Co Doping on the Properties of η′‐Cu6Sn5 and Ni3Sn4: First‐Principles Study

Insights into the atomic scale structure, bond characteristics and electrical property of Cu/CuGa2 (001) interface: an experimental and first-principles investigation

Thermal stability and diffusion barrier performance of amorphous Ni-P layer at Sn/Ni-P/Cu interface

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Effect of Different Concentrations of Co Doping on the Properties of η′‐Cu₆Sn₅ and Ni₃Sn₄: First‐Principles Study

Effect of Different Concentrations of Co Doping on the Properties of η′‐Cu₆Sn₅ and Ni₃Sn₄: First‐Principles Study